Publications

Publications of specific relevance to

2024

Weng Z, Wingfield B, Evans P, Baginski P, Kainth J, Nikolaenko A, Lee LY, Baginska J, Gillin W, Guiney I, Humphreys C and Fenwick O (2024). Memristors with Monolayer Graphene Electrodes Grown Directly on Sapphire Wafers. American Chemical Society  Acs Applied Electronic Materials  10.1021/acsaelm.4c01208

2022

Humphreys C (2022). From John Spence's Postdoc Time in Oxford to my Research on GaN and Graphene. Oxford University Press (Oup)  Microscopy and Microanalysis  vol. 28, (S1) 2736-2737. 10.1017/s1431927622010297

Sun YW, Holec D, Gehringer D, Li L, Fenwick O, Dunstan DJ and Humphreys CJ (2022). Graphene on silicon: Effects of the silicon surface orientation on the work function and carrier density of graphene. American Physical Society  Physical Review B  vol. 105, (16) 10.1103/PhysRevB.105.165416

Weng Z, Dixon SC, Lee LY, Humphreys CJ, Guiney I, Fenwick O and Gillin WP (2022). Wafer‐Scale Graphene Anodes Replace Indium Tin Oxide in Organic Light‐Emitting Diodes (Advanced Optical Materials 3/2022). Advanced Optical Materials  vol. 10, (3) 2270012-2270012. 10.1002/adom.202270012

Sun YW, Gehringer D, Holec D, Papageorgiou DG, Fenwick O, Qureshi SM, Humphreys CJ and Dunstan DJ (2022). Significant interlayer coupling in bilayer graphene and double-walled carbon nanotubes: A refinement of obtaining strain in low-dimensional materials. American Physical Society  Physical Review B  vol. 105, (2) 10.1103/physrevb.105.024103

Tricker DM, Brown PD, Xin Y, Cheng TS, Foxon CT and Humphreys CJ (2022). The relationship between epitaxial growth, defect microstructure and luminescence in GaN. Electron Microscopy and Analysis 1997  Taylor & Francis  10.1201/9781003063056-111

2021

Weng Z, Dixon SC, Lee LY, Humphreys CJ, Guiney I, Fenwick O and Gillin WP (2021). Wafer‐Scale Graphene Anodes Replace Indium Tin Oxide in Organic Light‐Emitting Diodes. Wiley  Advanced Optical Materials  2101675-2101675. 10.1002/adom.202101675

Pristovsek M, Frentrup M, Zhu T, Kusch G and Humphreys CJ (2021). X-ray characterisation of the basal stacking fault densities of (112̄2) GaN. Royal Society of Chemistry  Crystengcomm  vol. 23, (35) 6059-6069. 10.1039/d1ce00627d

Sun YW, Papageorgiou D, Puech P, Proctor JE, Machon D, Bousige C, San-Miguel A, Humphreys C and Dunstan DJ (2021). Mechanical Properties of Graphene. Aip Publishing  Applied Physics Reviews  10.1063/5.0040578

Sun YW, Holec D, Gehringer D, Fenwick O, Dunstan DJ and Humphreys CJ (2021). Erratum: Unexpected softness of bilayer graphene and softening of A-A stacked graphene layers [Phys. Rev. B 101, 125421 (2020)]. Physical Review B  vol. 103, (11) 119901-119901. 10.1103/physrevb.103.119901

Kvam EP, Eaglesham DJ, Humphreys CJ, Maher DM, Bean JC and Eraser HL (2021). Heteroepitaxial strains and interface structure of Ge–Si alloy layers on Si (100). Microscopy of Semiconducting Materials, 1987  Taylor & Francis  10.1201/9781003069621-27

2020

Sun Y, Passaretti P, Hernandez I, Gonzalez J, Rodriguez F, Liu W, Dunstan DJ, Oppenheimer PG and Humphreys CJ (2020). Nanomechanics of Graphene Oxide-bacteriophage based Self-assembled Porous Composites. Nature Publishing Group  Scientific Reports  vol. 10, 10.1038/s41598-020-72372-1

Zhang J, Guo Q, Li X, Li C, Wu K, Abrahams I, Yan H, Knight MM, Humphreys CJ and Su L (2020). Solution-Processed Epitaxial Growth of Arbitrary Surface Nanopatterns on Hybrid Perovskite Monocrystalline Thin Films. American Chemical Society  Acs Nano  10.1021/acsnano.9b08553

S N, Guiney I, Humphreys CJ, Sen P, Muralidharan R and Nath DN (2020). Au-free recessed Ohmic contacts to AlGaN/GaN high electron mobility transistor: Study of etch chemistry and metal scheme. American Vacuum Society  Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena  vol. 38, (3) 10.1116/1.5144509

Sun Y, Holec D, Gehringer D, Fenwick O, Dunstan D and Humphreys C (2020). Unexpected softness of bilayer graphene and softening of A-A stacked graphene layers. American Physical Society  Physical Review B: Condensed Matter and Materials Physics  vol. 101, 10.1103/PhysRevB.101.125421

2019

Remesh N, Kumar S, Guiney I, Humphreys CJ, Raghavan S, Muralidharan R and Nath DN (2019). A Novel Technique to Investigate the Role of Traps in the Off‐State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias. Wiley  Physica Status Solidi (a) – Applications and Materials Science  vol. 217, (7) 10.1002/pssa.201900794

Zhou B, Das A, Kappers M, Oliver R, Humphreys C and Krause S (2019). InGaN as a substrate for AC photoelectrochemical imaging. Mdpi  Sensors  10.3390/s19204386

Griffiths JT, Rivarola FWR, Davis NJLK, Ahumada-Lazo R, Alanis JA, Parkinson P, Binks DJ, Fu WY, De La Pena F, Price MB, Howkins A, Boyd I, Humphreys CJ, Greenham NC and Ducati C (2019). Effect of Size on the Luminescent Efficiency of Perovskite Nanocrystals. American Chemical Society (Acs)  Acs Applied Energy Materials  vol. 2, (10) 6998-7004. 10.1021/acsaem.8b02132

Sun YW, Liu W, Hernandez I, Gonzalez J, Rodriguez F, Dunstan DJ and Humphreys C (2019). 3D strain in 2D materials: to what extent is monolayer graphene graphite? American Physical Society  Physical Review Letters  vol. 123, 135501-135501. 10.1103/PhysRevLett.123.135501

Tang F, Zhu T, Fu W-Y, Oehler F, Zhang S, Griffiths JT, Humphreys C, Martin TL, Bagot PAJ, Moody MP, Patra SK, Schulz S, Dawson P, Church S, Jacobs J and Oliver RA (2019). Insight into the impact of atomic- and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m-plane freestanding GaN substrates. Aip Publishing  Journal of Applied Physics  vol. 125, (22) 10.1063/1.5097411

Massabuau FC-P, Horton MK, Pearce E, Hammersley S, Chen P, Zielinski MS, Weatherley TFK, Divitini G, Edwards PR, Kappers MJ, McAleese C, Moram MA, Humphreys CJ, Dawson P and Oliver RA (2019). Optical and structural properties of dislocations in InGaN. Aip Publishing  Journal of Applied Physics  vol. 125, (16) 10.1063/1.5084330

Christian GM, Schulz S, Hammersley S, Kappers MJ, Frentrup M, Humphreys CJ, Oliver RA and Dawson P (2019). Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength. Japanese Journal of Applied Physics  vol. 58, 10.7567/1347-4065/ab0407

Qadir A, Sun YW, Liu W, Oppenheimer PG, Xu Y, Humphreys CJ and Dunstan DJ (2019). Effect of humidity on the interlayer interaction of bilayer graphene. Physical Review B  vol. 99, (4) 10.1103/PhysRevB.99.045402

2018

Remesh N, Mohan N, Kumar S, Prabhu S, Guiney I, Humphreys CJ, Raghavan S, Muralidharan R and Nath DN (2018). Vertical Current Transport in AlGaN/GaN HEMTs on Silicon: Experimental Investigation and Analytical Model. Institute of Electrical and Electronics Engineers (Ieee)  Ieee Transactions On Electron Devices  vol. 66, (1) 613-618. 10.1109/ted.2018.2882533

Robin Y, Pristovsek M, Amano H, Oehler F, Oliver RA and Humphreys CJ (2018). What is red? On the chromaticity of orange-red InGaN/GaN based LEDs. Aip Publishing  Journal of Applied Physics  vol. 124, (18) 10.1063/1.5047240

Halsall MP, Crowe IF, Mullins J, Oliver RA, Kappers MJ and Humphreys CJ (2018). Photomodulated Reflectivity Measurement of Free-Carrier Dynamics in InGaN/GaN Quantum Wells. American Chemical Society (Acs)  Acs Photonics  vol. 5, (11) 4437-4446. 10.1021/acsphotonics.8b00904

Christian GM, Schulz S, Kappers MJ, Humphreys CJ, Oliver RA and Dawson P (2018). Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities. American Physical Society (Aps)  Physical Review B  vol. 98, (15) 10.1103/physrevb.98.155301

Christian G, Kappers M, Massabuau F, Humphreys C, Oliver R and Dawson P (2018). Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells. Mdpi  Materials  vol. 11, (9) 10.3390/ma11091736

Lee LY, Frentrup M, Kappers MJ, Oliver RA, Humphreys CJ and Wallis DJ (2018). Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN. Aip Publishing  Journal of Applied Physics  vol. 124, (10) 10.1063/1.5046801

Choi FS, Griffiths JT, Ren C, Lee KB, Zaidi ZH, Houston PA, Guiney I, Humphreys CJ, Oliver RA and Wallis DJ (2018). Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers. Aip Publishing  Journal of Applied Physics  vol. 124, (5) 10.1063/1.5027680

Humphreys C and Waddington G (2018). Response to letter from Wayne Osborn. Astronomy and Geophysics  vol. 59, (4)

Humphreys CJ, Massabuau FC-P, Rhode SL, Horton MK, O’Hanlon TJ, Kovacs A, Zielinski MS, Kappers MJ, Dunin-Borkowski RE and Oliver RA (2018). Atomic Resolution Imaging of Dislocations in AlGaN and the Efficiency of UV LEDs. Oxford University Press (Oup)  Microscopy and Microanalysis  vol. 24, (S1) 4-5. 10.1017/s143192761800051x

Cho S, Li X, Guiney I, Floros K, Hemakumara D, Wallis DJ, Humphreys C and Thayne IG (2018). Impact of stress in ICP‐CVD SiNx passivation films on the leakage current in AlGaN/GaN HEMTs. Institution of Engineering and Technology (Iet)  Electronics Letters  vol. 54, (15) 947-949. 10.1049/el.2018.1097

Zaidi ZH, Lee KB, Roberts JW, Guiney I, Qian H, Jiang S, Cheong JS, Li P, Wallis DJ, Humphreys CJ, Chalker PR and Houston PA (2018). Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs. Aip Publishing  Journal of Applied Physics  vol. 123, (18) 10.1063/1.5027822

Church SA, Hammersley S, Mitchell PW, Kappers MJ, Lee LY, Massabuau F, Sahonta SL, Frentrup M, Shaw LJ, Wallis DJ, Humphreys CJ, Oliver RA, Binks DJ and Dawson P (2018). Effect of stacking faults on the photoluminescence spectrum of zincblende GaN. Aip Publishing  Journal of Applied Physics  vol. 123, (18) 10.1063/1.5026267

Blenkhorn WE, Schulz S, Tanner DSP, Oliver RA, Kappers MJ, Humphreys CJ and Dawson P (2018). Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structures. Iop Publishing  Journal of Physics Condensed Matter  vol. 30, (17) 10.1088/1361-648x/aab818

Humphreys C and Waddington G (2018). Illuminating theory on early solar eclipse. Astronomy and Geophysics  vol. 59, (1)

Nixon D, Humphreys C and Waddington G (2018). Moon village: show us the money. Oxford University Press (Oup)  Astronomy & Geophysics  vol. 59, (1) 1.8-1.8. 10.1093/astrogeo/aty021

Tang F, Lee KB, Guiney I, Frentrup M, Barnard JS, Divitini G, Zaidi ZH, Martin TL, Bagot PA, Moody MP, Humphreys CJ, Houston PA, Oliver RA and Wallis DJ (2018). Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors. Aip Publishing  Journal of Applied Physics  vol. 123, (2) 10.1063/1.5006255

Kazemian P, Schönjahn C and Humphreys CJ (2018). Quantitative doping contrast profiling of p-n junctions in Si with the scanning electron microscope. Microscopy of Semiconducting Materials 2003  10.1201/9781351074636

2017

Hopkins MA, Allsopp DWE, Kappers MJ, Oliver RA and Humphreys CJ (2017). The ABC model of recombination reinterpreted: Impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes. Aip Publishing  Journal of Applied Physics  vol. 122, (23) 10.1063/1.4986434

Kumar S, Gupta P, Guiney I, Humphreys CJ, Raghavan S, Muralidharan R and Nath DN (2017). Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer. Institute of Electrical and Electronics Engineers (Ieee)  Ieee Transactions On Electron Devices  vol. 64, (12) 4868-4874. 10.1109/ted.2017.2757516

Humphreys C and Waddington G (2017). Solar eclipse of 1207 BC helps to date pharaohs. Oxford University Press (Oup)  Astronomy & Geophysics  vol. 58, (5) 5.39-5.42. 10.1093/astrogeo/atx178

Rouet-Leduc B, Hulbert C, Lubbers N, Barros K, Humphreys CJ and Johnson PA (2017). Machine Learning Predicts Laboratory Earthquakes. Geophysical Research Letters  vol. 44, (18) 9276-9282. 10.1002/2017GL074677

Frentrup M, Lee LY, Sahonta S-L, Kappers MJ, Massabuau F, Gupta P, Oliver RA, Humphreys CJ and Wallis DJ (2017). X-ray diffraction analysis of cubic zincblende III-nitrides. Iop Publishing  Journal of Physics D  vol. 50, (43) 10.1088/1361-6463/aa865e

Humphreys C (2017). Ahmed Zewail — A Towering Visionary. Personal and Scientific Reminiscences  World Scientific Publishing  10.1142/9781786344366_0019

Rouet-Leduc B, Hulbert C, Barros K, Lookman T and Humphreys CJ (2017). Automatized convergence of optoelectronic simulations using active machine learning. Aip Publishing  Applied Physics Letters  vol. 111, (4) 10.1063/1.4996233

Massabuau FC-P, Rhode SL, Horton MK, O’Hanlon TJ, Kovács A, Zielinski MS, Kappers MJ, Dunin-Borkowski RE, Humphreys CJ and Oliver RA (2017). Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties. American Chemical Society (Acs)  Nano Letters  vol. 17, (8) 4846-4852. 10.1021/acs.nanolett.7b01697

Griffiths JT, Ren CX, Coulon P-M, Le Boulbar ED, Bryce CG, Girgel I, Howkins A, Boyd I, Martin RW, Allsopp DWE, Shields PA, Humphreys CJ and Oliver RA (2017). Structural impact on the nanoscale optical properties of InGaN core-shell nanorods. Aip Publishing  Applied Physics Letters  vol. 110, (17) 10.1063/1.4982594

Jiang S, Lee KB, Guiney I, Miaja PF, Zaidi ZH, Qian H, Wallis DJ, Forsyth AJ, Humphreys CJ and Houston PA (2017). All-GaN-Integrated Cascode Heterojunction Field Effect Transistors. Institute of Electrical and Electronics Engineers (Ieee)  Ieee Transactions On Power Electronics  vol. 32, (11) 8743-8750. 10.1109/tpel.2016.2643499

Humphreys CJ, Griffiths JT, Tang F, Oehler F, Findlay SD, Zheng C, Etheridge J, Martin TL, Bagot PAJ, Moody MP, Sutherland D, Dawson P, Schulz S, Zhang S, Fu WY, Zhu T, Kappers MJ and Oliver RA (2017). The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem. Elsevier  Ultramicroscopy  vol. 176, 93-98. 10.1016/j.ultramic.2017.01.019

Qian H, Lee KB, Vajargah SH, Novikov SV, Guiney I, Zaidi ZH, Jiang S, Wallis DJ, Foxon CT, Humphreys CJ and Houston PA (2017). Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth. Elsevier  Journal of Crystal Growth  vol. 459, 185-188. 10.1016/j.jcrysgro.2016.12.025

Kim J-Y, Ionescu A, Mansell R, Farrer I, Oehler F, Kinane CJ, Cooper JFK, Steinke N-J, Langridge S, Stankiewicz R, Humphreys CJ, Cowburn RP, Holmes SN and Barnes CHW (2017). Structural and magnetic properties of ultra-thin Fe films on metal-organic chemical vapour deposited GaN(0001). Aip Publishing  Journal of Applied Physics  vol. 121, (4) 10.1063/1.4973956

Coulon P-M, Vajargah SH, Bao A, Edwards PR, Le Boulbar ED, Girgel I, Martin RW, Humphreys CJ, Oliver RA, Allsopp DWE and Shields PA (2017). Evolution of the m‑Plane Quantum Well Morphology and Composition within a GaN/InGaN Core–Shell Structure. American Chemical Society (Acs)  Crystal Growth & Design  vol. 17, (2) 474-482. 10.1021/acs.cgd.6b01281

Massabuau FC-P, Chen P, Horton MK, Rhode SL, Ren CX, O'Hanlon TJ, Kovács A, Kappers MJ, Humphreys CJ, Dunin-Borkowski RE and Oliver RA (2017). Carrier localization in the vicinity of dislocations in InGaN. Aip Publishing  Journal of Applied Physics  vol. 121, (1) 10.1063/1.4973278

Smeeton T and Humphreys C (2017). Perspectives on Electronic and Photonic Materials. Springer Handbook of Electronic and Photonic Materials  Springer Nature  10.1007/978-3-319-48933-9_1

2016

Griffiths J, Zhang S, Lhuillier J, Zhu D, Wallis D, Howkins A, Boyd I, Stowe D, Humphreys C and Oliver R (2016). Impact of high energy electrons on nitrides for nanocathodoluminescence. European Microscopy Congress 2016: Proceedings  Wiley  10.1002/9783527808465.emc2016.6172

Griffiths J, Zhang S, Rouet‐Leduc B, Fu WY, Zhu D, Wallis D, Howkins A, Boyd I, Stowe D, Humphreys C and Oliver R (2016). Nanocathodoluminescence reveals the mitigation of the Stark shift in InGaN quantum wells by silicon doping. European Microscopy Congress 2016: Proceedings  Wiley  10.1002/9783527808465.emc2016.6170

Zhu T, Gachet D, Tang F, Fu WY, Oehler F, Kappers MJ, Dawson P, Humphreys CJ and Oliver RA (2016). Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence. Aip Publishing  Applied Physics Letters  vol. 109, (23) 10.1063/1.4971366

Novikov SV, Staddon CR, Sahonta S-L, Oliver RA, Humphreys CJ and Foxon CT (2016). Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source. Elsevier  Journal of Crystal Growth  vol. 456, 151-154. 10.1016/j.jcrysgro.2016.07.038

Hibberd MT, Frey V, Spencer BF, Mitchell PW, Dawson P, Kappers MJ, Oliver RA, Humphreys CJ and Graham DM (2016). Dielectric response of wurtzite gallium nitride in the terahertz frequency range. Elsevier  Solid State Communications  vol. 247, 68-71. 10.1016/j.ssc.2016.08.017

Schulz S, Tanner DSP, O'Reilly EP, A. M, Tang F, Griffiths JT, Oehler F, Kappers MJ, Oliver RA, Humphreys CJ, Sutherland D, Davies MJ and Dawson P (2016). Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells. Aip Publishing  Applied Physics Letters  vol. 109, (22) 10.1063/1.4968591

Kundys D, Sutherland D, Davies MJ, Oehler F, Griffiths J, Dawson P, Kappers MJ, Humphreys CJ, Schulz S, Tang F and Oliver RA (2016). A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates. Sci Technol Adv Mater  vol. 17, (1) 736-743. 10.1080/14686996.2016.1244474

Griffiths JT, Zhang S, Lhuillier J, Zhu D, Fu WY, Howkins A, Boyd I, Stowe D, Wallis DJ, Humphreys CJ and Oliver RA (2016). Nano-cathodoluminescence reveals the effect of electron damage on the optical properties of nitride optoelectronics and the damage threshold. Aip Publishing  Journal of Applied Physics  vol. 120, (16) 10.1063/1.4965989

Hocker M, Maier P, Jerg L, Tischer I, Neusser G, Kranz C, Pristovsek M, Humphreys CJ, Leute RAR, Heinz D, Rettig O, Scholz F and Thonke K (2016). Determination of axial and lateral exciton diffusion length in GaN by electron energy dependent cathodoluminescence. Aip Publishing  Journal of Applied Physics  vol. 120, (8) 10.1063/1.4961417

Muhammed MM, Roldan MA, Yamashita Y, Sahonta S-L, Ajia IA, Iizuka K, Kuramata A, Humphreys CJ and Roqan IS (2016). High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer. Springer Nature  Scientific Reports  vol. 6, (1) 10.1038/srep29747

Pristovsek M, Han Y, Zhu T, Oehler F, Tang F, Oliver RA, Humphreys CJ, Tytko D, Choi P-P, Raabe D, Brunner F and Weyers M (2016). Structural and optical properties of (112̅2) InGaN quantum wells compared to (0001) and (112̅0). Iop Publishing  Semiconductor Science and Technology  vol. 31, (8) 10.1088/0268-1242/31/8/085007

Presa S, Maaskant PP, Kappers MJ, Humphreys CJ and Corbett B (2016). Combined electrical and resonant optical excitation characterization of multi-quantum well InGaN-based light-emitting diodes. Aip Publishing  Aip Advances  vol. 6, (7) 10.1063/1.4959100

Davies MJ, Dawson P, Hammersley S, Zhu T, Kappers MJ, Humphreys CJ and Oliver RA (2016). Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells. Aip Publishing  Applied Physics Letters  vol. 108, (25) 10.1063/1.4954236

Corbett B, Lymperakis L, Scholz F, Humphreys C, Brunner F and Meyer T (2016). Scalable semipolar gallium nitride templates for high-speed LEDs. Spie, The International Society For Optics and Photonics  Spie Newsroom  10.1117/2.1201605.006482

Spencer BF, Smith WF, Hibberd MT, Dawson P, Beck M, Bartels A, Guiney I, Humphreys CJ and Graham DM (2016). Terahertz cyclotron resonance spectroscopy of an AlGaN/GaN heterostructure using a high-field pulsed magnet and an asynchronous optical sampling technique. Aip Publishing  Applied Physics Letters  vol. 108, (21) 10.1063/1.4948582

Dawson P, Schulz S, Oliver RA, Kappers MJ and Humphreys CJ (2016). The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells. Journal of Applied Physics  vol. 119, (18) 10.1063/1.4948237

Qian H, Lee KB, Vajargah SH, Novikov SV, Guiney I, Zhang S, Zaidi ZH, Jiang S, Wallis DJ, Foxon CT, Humphreys CJ and Houston PA (2016). Characterization of p-GaN1−x As x /n-GaN PN junction diodes. Iop Publishing  Semiconductor Science and Technology  vol. 31, (6) 10.1088/0268-1242/31/6/065020

Griffiths JT, Oehler F, Tang F, Zhang S, Fu WY, Zhu T, Findlay SD, Zheng C, Etheridge J, Martin TL, Bagot PAJ, Moody MP, Sutherland D, Dawson P, Kappers MJ, Humphreys CJ and Oliver RA (2016). The microstructure of non-polar a-plane (11 2 ¯0) InGaN quantum wells. Aip Publishing  Journal of Applied Physics  vol. 119, (17) 10.1063/1.4948299

Han Y, Caliebe M, Hage F, Ramasse Q, Pristovsek M, Zhu T, Scholz F and Humphreys C (2016). Toward defect‐free semi‐polar GaN templates on pre‐structured sapphire (Phys. Status Solidi B 5/2016). Wiley  Physica Status Solidi (B)  vol. 253, (5) 1024-1024. 10.1002/pssb.201670532

Rouet-Leduc B, Barros K, Lookman T and Humphreys CJ (2016). Optimisation of GaN LEDs and the reduction of efficiency droop using active machine learning. Springer Nature  Scientific Reports  vol. 6, (1) 10.1038/srep24862

Hammersley S, Kappers MJ, Massabuau FC, Sahonta S, Dawson P, Oliver RA and Humphreys CJ (2016). Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures. Physica Status Solidi (C)  10.1002/pssc.201610187

Caliebe M, Tandukar S, Cheng Z, Hocker M, Han Y, Meisch T, Heinz D, Huber F, Bauer S, Plettl A, Humphreys C, Thonke K and Scholz F (2016). Influence of trench period and depth on MOVPE grown (112¯2) GaN on patterned r-plane sapphire substrates. Elsevier  Journal of Crystal Growth  vol. 440, 69-75. 10.1016/j.jcrysgro.2016.01.014

Waller WM, Uren MJ, Lee KB, Houston PA, Wallis DJ, Guiney I, Humphreys CJ, Pandey S, Sonsky J and Kuball M (2016). Subthreshold Mobility in AlGaN/GaN HEMTs. Institute of Electrical and Electronics Engineers (Ieee)  Ieee Transactions On Electron Devices  vol. 63, (5) 1861-1865. 10.1109/ted.2016.2542588

Le Boulbar ED, Edwards PR, Vajargah SH, Griffiths I, Gîrgel I, Coulon P-M, Cherns D, Martin RW, Humphreys CJ, Bowen CR, Allsopp DWE and Shields PA (2016). Structural and Optical Emission Uniformity of m‑Plane InGaN Single Quantum Wells in Core–Shell Nanorods. American Chemical Society (Acs)  Crystal Growth & Design  vol. 16, (4) 1907-1916. 10.1021/acs.cgd.5b01438

Rhode SL, Horton MK, Sahonta S-L, Kappers MJ, Haigh SJ, Pennycook TJ, McAleese C, Humphreys CJ, Dusane RO and Moram MA (2016). Dislocation core structures in (0001) InGaN. Aip Publishing  Journal of Applied Physics  vol. 119, (10) 10.1063/1.4942847

Roberts JW, Chalker PR, Lee KB, Houston PA, Cho SJ, Thayne IG, Guiney I, Wallis D and Humphreys CJ (2016). Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics. Aip Publishing  Applied Physics Letters  vol. 108, (7) 10.1063/1.4942093

Davies MJ, Hammersley S, Massabuau FC-P, Dawson P, Oliver RA, Kappers MJ and Humphreys CJ (2016). A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers. Aip Publishing  Journal of Applied Physics  vol. 119, (5) 10.1063/1.4941321

Han Y, Zhu D, Zhu T, Humphreys CJ and Wallis DJ (2016). Origins of hillock defects on GaN templates grown on Si(111). Elsevier  Journal of Crystal Growth  vol. 434, 123-127. 10.1016/j.jcrysgro.2015.11.005

Kakanakova-Georgieva A, Sahonta S-L, Nilsson D, Trinh XT, Son NT, Janzén E and Humphreys CJ (2016). n-Type conductivity bound by the growth temperature: the case of Al 0.72 Ga 0.28 N highly doped by silicon. Royal Society of Chemistry (Rsc)  Journal of Materials Chemistry C  vol. 4, (35) 8291-8296. 10.1039/c6tc02825j

Zhu D and Humphreys CJ (2016). Solid-State Lighting Based on Light Emitting Diode Technology. Optics in Our Time  Springer Nature  10.1007/978-3-319-31903-2_5

2015

Rhode SL, Horton MK, Fu WY, Sahonta S-L, Kappers MJ, Pennycook TJ, Humphreys CJ, Dusane RO and Moram MA (2015). Dislocation core structures in Si-doped GaN. Aip Publishing  Applied Physics Letters  vol. 107, (24) 10.1063/1.4937457

Han Y, Caliebe M, Hage F, Ramasse Q, Pristovsek M, Zhu T, Scholz F and Humphreys C (2015). Toward defect‐free semi‐polar GaN templates on pre‐structured sapphire. Wiley  Physica Status Solidi (B)  vol. 253, (5) 834-839. 10.1002/pssb.201552636

Schulz S, Tanner DP, O'Reilly EP, A. M, Martin TL, Bagot PAJ, Moody MP, Tang F, Griffiths JT, Oehler F, Kappers MJ, Oliver RA, Humphreys CJ, Sutherland D, Davies MJ and Dawson P (2015). Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory. American Physical Society (Aps)  Physical Review B  vol. 92, (23) 10.1103/physrevb.92.235419

Zhang S, Cui Y, Griffiths JT, Fu WY, Freysoldt C, Neugebauer J, Humphreys CJ and Oliver RA (2015). Difference in linear polarization of biaxially strained InxGa1−xN alloys on nonpolar a-plane and m-plane GaN. American Physical Society (Aps)  Physical Review B  vol. 92, (24) 10.1103/physrevb.92.245202

Griffiths JT, Zhang S, Rouet-Leduc B, Fu WY, Bao A, Zhu D, Wallis DJ, Howkins A, Boyd I, Stowe D, Kappers MJ, Humphreys CJ and Oliver RA (2015). Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping. American Chemical Society (Acs)  Nano Letters  vol. 15, (11) 7639-7643. 10.1021/acs.nanolett.5b03531

Meneghini M, Zhu D, Humphreys CJ, Berti M, Gasparotto A, Cesca T, Vinattieri A, Bogani F, Meneghesso G and Zanoni E (2015). Impact of thermal treatment on the optical performance of InGaN/GaN light emitting diodes. Aip Publishing  Aip Advances  vol. 5, (10) 10.1063/1.4934491

Hammersley S, Kappers MJ, Massabuau FC-P, Sahonta S-L, Dawson P, Oliver RA and Humphreys CJ (2015). Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions. Aip Publishing  Applied Physics Letters  vol. 107, (13) 10.1063/1.4932200

Pristovsek M, Frentrup M, Han Y and Humphreys CJ (2015). Optimizing GaN () hetero‐epitaxial templates grown on () sapphire. Wiley  Physica Status Solidi (B)  vol. 253, (1) 61-66. 10.1002/pssb.201552263

Zaidi ZH, Lee KB, Guiney I, Qian H, Jiang S, Wallis DJ, Humphreys CJ and Houston PA (2015). Enhancement mode operation in AlInN/GaN (MIS)HEMTs on Si substrates using a fluorine implant. Iop Publishing  Semiconductor Science and Technology  vol. 30, (10) 10.1088/0268-1242/30/10/105007

Caliebe M, Han Y, Hocker M, Meisch T, Humphreys C, Thonke K and Scholz F (2015). Growth and coalescence studies of oriented GaN on pre‐structured sapphire substrates using marker layers. Wiley  Physica Status Solidi (B)  vol. 253, (1) 46-53. 10.1002/pssb.201552266

Waller WM, Karboyan S, Uren MJ, Lee KB, Houston PA, Wallis DJ, Guiney I, Humphreys CJ and Kuball M (2015). Interface State Artefact in Long Gate-Length AlGaN/GaN HEMTs. Institute of Electrical and Electronics Engineers (Ieee)  Ieee Transactions On Electron Devices  vol. 62, (8) 2464-2469. 10.1109/ted.2015.2444911

Trindade AJ, Guilhabert B, Xie EY, Ferreira R, McKendry JJD, Zhu D, Laurand N, Gu E, Wallis DJ, Watson IM, Humphreys CJ and Dawson MD (2015). Heterogeneous integration of gallium nitride light-emitting diodes on diamond and silica by transfer printing. Optica Publishing Group  Optics Express  vol. 23, (7) 9329-9338. 10.1364/oe.23.009329

Han Y, Caliebe M, Kappers M, Scholz F, Pristovsek M and Humphreys C (2015). Origin of faceted surface hillocks on semi-polar (112¯2) GaN templates grown on pre-structured sapphire. Elsevier  Journal of Crystal Growth  vol. 415, 170-175. 10.1016/j.jcrysgro.2014.12.040

Wallace MJ, Edwards PR, Kappers MJ, Hopkins MA, Oehler F, Sivaraya S, Oliver RA, Humphreys CJ, Allsopp DWE and Martin RW (2015). Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes. Aip Publishing  Journal of Applied Physics  vol. 117, (11) 10.1063/1.4915628

Lee KB, Guiney I, Jiang S, Zaidi ZH, Qian H, Wallis DJ, Uren MJ, Kuball M, Humphreys CJ and Houston PA (2015). Enhancement-mode metal–insulator–semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0 V and blocking voltage above 1000 V. Iop Publishing  Applied Physics Express  vol. 8, (3) 10.7567/apex.8.036502

Horton MK, Rhode S, Sahonta S-L, Kappers MJ, Haigh SJ, Pennycook TJ, Humphreys CJ, Dusane RO and Moram MA (2015). Segregation of In to Dislocations in InGaN. American Chemical Society (Acs)  Nano Letters  vol. 15, (2) 923-930. 10.1021/nl5036513

2014

Hammersley S, Davies MJ, Dawson P, Oliver RA, Kappers MJ and Humphreys CJ (2014). Carrier distributions in InGaN/GaN light‐emitting diodes. Wiley  Physica Status Solidi (B)  vol. 252, (5) 890-894. 10.1002/pssb.201451534

Zaidi ZH, Lee KB, Guiney I, Qian H, Jiang S, Wallis DJ, Humphreys CJ and Houston PA (2014). Sulfuric acid and hydrogen peroxide surface passivation effects on AlGaN/GaN high electron mobility transistors. Aip Publishing  Journal of Applied Physics  vol. 116, (24) 10.1063/1.4904923

Massabuau FC, Davies MJ, Blenkhorn WE, Hammersley S, Kappers MJ, Humphreys CJ, Dawson P and Oliver RA (2014). Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures. Wiley  Physica Status Solidi (B)  vol. 252, (5) 928-935. 10.1002/pssb.201451543

Griffiths JT, Zhu T, Oehler F, Emery RM, Fu WY, Reid BPL, Taylor RA, Kappers MJ, Humphreys CJ and Oliver RA (2014). Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method. Aip Publishing  Apl Materials  vol. 2, (12) 10.1063/1.4904068

Oehler F, Sutherland D, Zhu T, Emery R, Badcock TJ, Kappers MJ, Humphreys CJ, Dawson P and Oliver RA (2014). Evaluation of growth methods for the heteroepitaxy of non-polar (112¯0) GAN on sapphire by MOVPE. Elsevier  Journal of Crystal Growth  vol. 408, 32-41. 10.1016/j.jcrysgro.2014.09.009

Davies MJ, Dawson P, Massabuau FC, Le Fol A, Oliver RA, Kappers MJ and Humphreys CJ (2014). A study of the inclusion of prelayers in InGaN/GaN single‐ and multiple‐quantum‐well structures. Wiley  Physica Status Solidi (B)  vol. 252, (5) 866-872. 10.1002/pssb.201451535

Dinh DV, Oehler F, Zubialevich VZ, Kappers MJ, Alam SN, Caliebe M, Scholtz F, Humphreys CJ and Parbrook PJ (2014). Comparative study of polar and semipolar ( 11 2 ¯ 2 ) InGaN layers grown by metalorganic vapour phase epitaxy. Aip Publishing  Journal of Applied Physics  vol. 116, (15) 10.1063/1.4898569

Lozano JG, Yang H, Guerrero-Lebrero MP, D'Alfonso AJ, Yasuhara A, Okunishi E, Zhang S, Humphreys CJ, Allen LJ, Galindo PL, Hirsch PB and Nellist PD (2014). Direct Observation of Depth-Dependent Atomic Displacements Associated with Dislocations in Gallium Nitride. American Physical Society (Aps)  Physical Review Letters  vol. 113, (13) 10.1103/physrevlett.113.135503

Massabuau FC-P, Davies MJ, Oehler F, Pamenter SK, Thrush EJ, Kappers MJ, Kovács A, Williams T, Hopkins MA, Humphreys CJ, Dawson P, Dunin-Borkowski RE, Etheridge J, Allsopp DWE and Oliver RA (2014). The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem. Aip Publishing  Applied Physics Letters  vol. 105, (11) 10.1063/1.4896279

Rhode SL, Fu WY, Moram MA, Massabuau FC-P, Kappers MJ, McAleese C, Oehler F, Humphreys CJ, Dusane RO and Sahonta S (2014). Structure and strain relaxation effects of defects in InxGa1−xN epilayers. Aip Publishing  Journal of Applied Physics  vol. 116, (10) 10.1063/1.4894688

Davies MJ, Dawson P, Massabuau FC-P, Oliver RA, Kappers MJ and Humphreys CJ (2014). The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures. Aip Publishing  Applied Physics Letters  vol. 105, (9) 10.1063/1.4894834

Humphreys C (2014). How Cutting-Edge Atomic Resolution Microscopy Can Help to Solve Some of the World's Energy Problems. Oxford University Press (Oup)  Microscopy and Microanalysis  vol. 20, (S3) xcvii-c. 10.1017/s1431927614013154

Humphreys C and Ford BJ (2014). How Cutting-Edge Atomic Resolution Microscopy Can Help to Solve Some of the World’s Energy Problems. Oxford University Press (Oup)  Microscopy and Microanalysis  vol. 20, (S2) 11-14. 10.1017/s1431927614001123

Wallace MJ, Edwards PR, Kappers MJ, Hopkins MA, Oehler F, Sivaraya S, Allsopp DWE, Oliver RA, Humphreys CJ and Martin RW (2014). Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode. Aip Publishing  Journal of Applied Physics  vol. 116, (3) 10.1063/1.4890497

Möreke J, Uren MJ, Novikov SV, Foxon CT, Vajargah SH, Wallis DJ, Humphreys CJ, Haigh SJ, Al-Khalidi A, Wasige E, Thayne I and Kuball M (2014). Investigation of the GaN-on-GaAs interface for vertical power device applications. Aip Publishing  Journal of Applied Physics  vol. 116, (1) 10.1063/1.4887139

Calciati M, Goano M, Bertazzi F, Vallone M, Zhou X, Ghione G, Meneghini M, Meneghesso G, Zanoni E, Bellotti E, Verzellesi G, Zhu D and Humphreys C (2014). Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues. Aip Publishing  Aip Advances  vol. 4, (6) 10.1063/1.4882176

Venturi G, Castaldini A, Cavallini A, Meneghini M, Zanoni E, Zhu D and Humphreys C (2014). Dislocation-related trap levels in nitride-based light emitting diodes. Aip Publishing  Applied Physics Letters  vol. 104, (21) 10.1063/1.4879644

Kundys D, Schulz S, Oehler F, Sutherland D, Badcock TJ, Dawson P, Kappers MJ, Oliver RA and Humphreys CJ (2014). Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire. Aip Publishing  Journal of Applied Physics  vol. 115, (11) 10.1063/1.4868692

Badcock TJ, Dawson P, Davies MJ, Kappers MJ, Massabuau FC-P, Oehler F, Oliver RA and Humphreys CJ (2014). Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells. Aip Publishing  Journal of Applied Physics  vol. 115, (11) 10.1063/1.4868628

Bruckbauer J, Edwards PR, Sahonta S-L, Massabuau FC-P, Kappers MJ, Humphreys CJ, Oliver RA and Martin RW (2014). Cathodoluminescence hyperspectral imaging of trench-like defects in InGaN/GaN quantum well structures. Iop Publishing  Journal of Physics D  vol. 47, (13) 10.1088/0022-3727/47/13/135107

Massabuau FC, Le Fol A, Pamenter SK, Oehler F, Kappers MJ, Humphreys CJ and Oliver RA (2014). The impact of growth parameters on trench defects in InGaN/GaN quantum wells. Wiley  Physica Status Solidi (a) – Applications and Materials Science  vol. 211, (4) 740-743. 10.1002/pssa.201300485

Davies MJ, Dawson P, Massabuau FC, Oehler F, Oliver RA, Kappers MJ, Badcock TJ and Humphreys CJ (2014). The effects of varying threading dislocation density on the optical properties of InGaN/GaN quantum wells. Wiley  Physica Status Solidi (C)  vol. 11, (3‐4) 750-753. 10.1002/pssc.201300452

Tian P, McKendry JJD, Gong Z, Zhang S, Watson S, Zhu D, Watson IM, Gu E, Kelly AE, Humphreys CJ and Dawson MD (2014). Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates. Aip Publishing  Journal of Applied Physics  vol. 115, (3) 10.1063/1.4862298

Massabuau FC-P, Tartan CC, Traynier R, Blenkhorn WE, Kappers MJ, Dawson P, Humphreys CJ and Oliver RA (2014). The impact of substrate miscut on the microstructure and photoluminescence efficiency of (0001) InGaN quantum wells grown by a two-temperature method. Elsevier  Journal of Crystal Growth  vol. 386, 88-93. 10.1016/j.jcrysgro.2013.10.004

2013

Zhang S, Fu WY, Holec D, Humphreys CJ and Moram MA (2013). Elastic constants and critical thicknesses of ScGaN and ScAlN. Aip Publishing  Journal of Applied Physics  vol. 114, (24) 10.1063/1.4848036

Zhang S, Zhang Y, Cui Y, Freysoldt C, Neugebauer J, Lieten RR, Barnard JS and Humphreys CJ (2013). Interfacial Structure and Chemistry of GaN on Ge(111). American Physical Society (Aps)  Physical Review Letters  vol. 111, (25) 10.1103/physrevlett.111.256101

Trindade AJ, Guilhabert B, Massoubre D, Zhu D, Laurand N, Gu E, Watson IM, Humphreys CJ and Dawson MD (2013). Nanoscale-accuracy transfer printing of ultra-thin AlInGaN light-emitting diodes onto mechanically flexible substrates. Aip Publishing  Applied Physics Letters  vol. 103, (25) 10.1063/1.4851875

Naresh-Kumar G, Bruckbauer J, Edwards PR, Kraeusel S, Hourahine B, Martin RW, Kappers MJ, Moram MA, Lovelock S, Oliver RA, Humphreys CJ and Trager-Cowan C (2013). Coincident Electron Channeling and Cathodoluminescence Studies of Threading Dislocations in GaN. Oxford University Press (Oup)  Microscopy and Microanalysis  vol. 20, (1) 55-60. 10.1017/s1431927613013755

Oehler F, Zhu T, Rhode S, Kappers MJ, Humphreys CJ and Oliver RA (2013). Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridges. Elsevier  Journal of Crystal Growth  vol. 383, 12-18. 10.1016/j.jcrysgro.2013.07.035

Zhang S, Holec D, Fu WY, Humphreys CJ and Moram MA (2013). Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides. Aip Publishing  Journal of Applied Physics  vol. 114, (13) 10.1063/1.4824179

Zhu D, Wallis DJ and Humphreys CJ (2013). Prospects of III-nitride optoelectronics grown on Si. Iop Publishing  Reports On Progress in Physics  vol. 76, (10) 10.1088/0034-4885/76/10/106501

Zhang Y, Kappers MJ, Zhu D, Oehler F, Gao F and Humphreys CJ (2013). The effect of dislocations on the efficiency of InGaN/GaN solar cells. Elsevier  Solar Energy Materials and Solar Cells  vol. 117, 279-284. 10.1016/j.solmat.2013.06.022

Oliver RA, Massabuau FC-P, Kappers MJ, Phillips WA, Thrush EJ, Tartan CC, Blenkhorn WE, Badcock TJ, Dawson P, Hopkins MA, Allsopp DWE and Humphreys CJ (2013). The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes. Aip Publishing  Applied Physics Letters  vol. 103, (14) 10.1063/1.4824193

Hirsch PB, Lozano JG, Rhode S, Horton MK, Moram MA, Zhang S, Kappers MJ, Humphreys CJ, Yasuhara A, Okunishi E and Nellist PD (2013). The dissociation of the [a + c] dislocation in GaN. Taylor & Francis  The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics  vol. 93, (28-30) 3925-3938. 10.1080/14786435.2013.797617

Wallis DJ, Zhu D, Oehler F, Westwater SP, Pujol A and Humphreys CJ (2013). Measuring the composition of AlGaN layers in GaN based structures grown on 150?mm Si substrates using (2?0?5) reciprocal space maps. Iop Publishing  Semiconductor Science and Technology  vol. 28, (9) 10.1088/0268-1242/28/9/094006

Oehler F, Vickers ME, Kappers MJ, Humphreys CJ and Oliver RA (2013). Fundamentals of X-ray Diffraction Characterisation of Strain in GaN Based Compounds. Iop Publishing  Japanese Journal of Applied Physics  vol. 52, (8S) 10.7567/jjap.52.08jb29

Rhode SK, Horton MK, Kappers MJ, Zhang S, Humphreys CJ, Dusane RO, Sahonta S-L and Moram MA (2013). Mg Doping Affects Dislocation Core Structures in GaN. American Physical Society (Aps)  Physical Review Letters  vol. 111, (2) 10.1103/physrevlett.111.025502

Meneghini M, Vaccari S, Garbujo A, Trivellin N, Zhu D, Humphreys CJ, Calciati M, Goano M, Bertazzi F, Ghione G, Bellotti E, Meneghesso G and Zanoni E (2013). Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells. Iop Publishing  Japanese Journal of Applied Physics  vol. 52, (8S) 10.7567/jjap.52.08jg09

Badcock TJ, Hammersley S, Watson-Parris D, Dawson P, Godfrey MJ, Kappers MJ, McAleese C, Oliver RA and Humphreys CJ (2013). Carrier Density Dependent Localization and Consequences for Efficiency Droop in InGaN/GaN Quantum Well Structures. Iop Publishing  Japanese Journal of Applied Physics  vol. 52, (8S) 10.7567/jjap.52.08jk10

Badcock TJ, Dawson P, Oliver RA, Kappers MJ and Humphreys CJ (2013). Evidence for Dark States in the Temperature Dependent Recombination Dynamics of InGaN/GaN Quantum Wells. Iop Publishing  Japanese Journal of Applied Physics  vol. 52, (8S) 10.7567/jjap.52.08jl12

Taylor E, Fang F, Oehler F, Edwards PR, Kappers MJ, Lorenz K, Alves E, McAleese C, Humphreys CJ and Martin RW (2013). Composition and luminescence studies of InGaN epilayers grown at different hydrogen flow rates. Iop Publishing  Semiconductor Science and Technology  vol. 28, (6) 10.1088/0268-1242/28/6/065011

Massabuau FC-P, Trinh-Xuan L, Lodié D, Thrush EJ, Zhu D, Oehler F, Zhu T, Kappers MJ, Humphreys CJ and Oliver RA (2013). Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells. Aip Publishing  Journal of Applied Physics  vol. 113, (7) 10.1063/1.4792505

Jouvet N, Kappers MJ, Humphreys CJ and Oliver RA (2013). The impact of substrate miscut on the morphology of InGaN epitaxial layers subjected to a growth interruption. Aip Publishing  Journal of Applied Physics  vol. 113, (6) 10.1063/1.4790311

Maaskant PP, Shams H, Akhter M, Henry W, Kappers MJ, Zhu D, Humphreys CJ and Corbett B (2013). High-Speed Substrate-Emitting Micro-Light-Emitting Diodes for Applications Requiring High Radiance. Iop Publishing  Applied Physics Express  vol. 6, (2) 10.7567/apex.6.022102

Davies MJ, Badcock TJ, Dawson P, Kappers MJ, Oliver RA and Humphreys CJ (2013). High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop. Aip Publishing  Applied Physics Letters  vol. 102, (2) 10.1063/1.4781398

2012

Humphreys CJ (2012). The significance of Bragg's law in electron diffraction and microscopy, and Bragg's second law. International Union of Crystallography (Iucr)  Acta Crystallographica Section a: Foundations and Advances  vol. 69, (1) 45-50. 10.1107/s0108767312047587

Sahonta S, Kappers MJ, Zhu D, Puchtler TJ, Zhu T, Bennett SE, Humphreys CJ and Oliver RA (2012). Properties of trench defects in InGaN/GaN quantum well structures. Wiley  Physica Status Solidi (a) – Applications and Materials Science  vol. 210, (1) 195-198. 10.1002/pssa.201200408

Massabuau FC-P, Sahonta S-L, Trinh-Xuan L, Rhode S, Puchtler TJ, Kappers MJ, Humphreys CJ and Oliver RA (2012). Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures. Aip Publishing  Applied Physics Letters  vol. 101, (21) 10.1063/1.4768291

Badcock TJ, Hao R, Moram MA, Kappers MJ, Dawson P, Oliver RA and Humphreys CJ (2012). Recombination mechanisms in heteroepitaxial non-polar InGaN/GaN quantum wells. Aip Publishing  Journal of Applied Physics  vol. 112, (1) 10.1063/1.4731730

Hammersley S, Watson-Parris D, Dawson P, Godfrey MJ, Badcock TJ, Kappers MJ, McAleese C, Oliver RA and Humphreys CJ (2012). The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures. Aip Publishing  Journal of Applied Physics  vol. 111, (8) 10.1063/1.3703062

Meneghini M, Vaccari S, Trivellin N, Zhu D, Humphreys C, Butendheich R, Leirer C, Hahn B, Meneghesso G and Zanoni E (2012). Analysis of Defect-Related Localized Emission Processes in InGaN/GaN-Based LEDs. Institute of Electrical and Electronics Engineers (Ieee)  Ieee Transactions On Electron Devices  vol. 59, (5) 1416-1422. 10.1109/ted.2012.2186970

Bennett SE, Smeeton TM, Saxey DW, Smith GDW, Hooper SE, Heffernan J, Humphreys CJ and Oliver RA (2012). Atom probe tomography characterisation of a laser diode structure grown by molecular beam epitaxy. Aip Publishing  Journal of Applied Physics  vol. 111, (5) 10.1063/1.3692569

Badcock TJ, Kappers MJ, Moram MA, Hao R, Dawson P and Humphreys CJ (2012). Exciton confinement in narrow non‐polar InGaN/GaN quantum wells grown on r‐plane sapphire. Wiley  Physica Status Solidi (B)  vol. 249, (3) 494-497. 10.1002/pssb.201100479

Vickers ME, Hollander JL, McAleese C, Kappers MJ, Moram MA and Humphreys CJ (2012). Determination of the composition and thickness of semi-polar and non-polar III-nitride films and quantum wells using X-ray scattering. Aip Publishing  Journal of Applied Physics  vol. 111, (4) 10.1063/1.3678631

Amari H, Kappers MJ, Humphreys CJ, Chèze C and Walther T (2012). Measurement of the Al content in AlGaN epitaxial layers by combined energy‐dispersive X‐ray and electron energy‐loss spectroscopy in a transmission electron microscope. Wiley  Physica Status Solidi (C)  vol. 9, (3‐4) 1079-1082. 10.1002/pssc.201100165

Radtke G, Couillard M, Botton GA, Zhu D and Humphreys CJ (2012). Structure and chemistry of the Si(111)/AlN interface. Aip Publishing  Applied Physics Letters  vol. 100, (1) 10.1063/1.3674984

Elsherif OS, Vernon-Parry KD, Dharmadasa IM, Evans-Freeman JH, Airey RJ, Kappers MJ and Humphreys CJ (2012). Characterization of defects in Mg doped GaN epitaxial layers using conductance measurements. Elsevier  Thin Solid Films  vol. 520, (7) 3064-3070. 10.1016/j.tsf.2011.11.020

2011

Badcock TJ, Kappers MJ, Moram MA, Dawson P and Humphreys CJ (2011). Modification of carrier localization in basal‐plane stacking faults: The effect of Si‐doping in a‐plane GaN. Wiley  Physica Status Solidi (B)  vol. 249, (3) 498-502. 10.1002/pssb.201100480

Hao R, Kappers MJ, Moram MA and Humphreys CJ (2011). Defect reduction processes in heteroepitaxial non-polar a-plane GaN films. Elsevier  Journal of Crystal Growth  vol. 337, (1) 81-86. 10.1016/j.jcrysgro.2011.10.004

Knoll SM, Zhang S, Joyce TB, Kappers MJ, Humphreys CJ and Moram MA (2011). Growth, microstructure and morphology of epitaxial ScGaN films. Wiley  Physica Status Solidi (a) – Applications and Materials Science  vol. 209, (1) 33-40. 10.1002/pssa.201100158

Zhu D, McAleese C, Häberlen M, Kappers MJ, Hylton N, Dawson P, Radtke G, Couillard M, Botton GA, Sahonta S and Humphreys CJ (2011). High‐efficiency InGaN/GaN quantum well structures on large area silicon substrates. Wiley  Physica Status Solidi (a) – Applications and Materials Science  vol. 209, (1) 13-16. 10.1002/pssa.201100129

Moram MA, Kappers MJ, Massabuau F, Oliver RA and Humphreys CJ (2011). Response to “Comment on ‘The effects of Si doping on dislocation movement and tensile stress in GaN films’” [J. Appl. Phys. 109, 073509 (2011)]. Aip Publishing  Journal of Applied Physics  vol. 110, (9) 10.1063/1.3656431

Zhang Y, Fu W-Y, Humphreys C and Lieten R (2011). Structural Characterisation of Improved GaN Epilayers Grown on a Ge(111) Substrate. Iop Publishing  Applied Physics Express  vol. 4, (9) 10.1143/apex.4.091001

Badcock TJ, Hao R, Moram MA, Kappers MJ, Dawson P and Humphreys CJ (2011). The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown on r-Plane Sapphire Substrates. Iop Publishing  Japanese Journal of Applied Physics  vol. 50, (8R) 10.1143/jjap.50.080201

Badcock TJ, Hao R, Moram MA, Kappers MJ, Dawson P and Humphreys CJ (2011). The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown on r -Plane Sapphire Substrates. Iop Publishing  Japanese Journal of Applied Physics  vol. 50, (8R) 10.7567/jjap.50.080201

Bennett SE, Saxey DW, Kappers MJ, Barnard JS, Humphreys CJ, Smith GD and Oliver RA (2011). Atom probe tomography assessment of the impact of electron beam exposure on InxGa1−xN/GaN quantum wells. Aip Publishing  Applied Physics Letters  vol. 99, (2) 10.1063/1.3610468

Fu WY, Kappers MJ, Zhang Y, Humphreys CJ and Moram MA (2011). Dislocation Climb in c-Plane AlN Films. Iop Publishing  Applied Physics Express  vol. 4, (6) 10.1143/apex.4.065503

Badcock TJ, Hao R, Moram MA, Dawson P, Kappers MJ and Humphreys CJ (2011). The effect of indium concentration on the optical properties of a‐plane InGaN/GaN quantum wells grown on r‐plane sapphire substrates. Wiley  Physica Status Solidi (a) – Applications and Materials Science  vol. 208, (7) 1529-1531. 10.1002/pssa.201001007

Holec D, Rachbauer R, Kiener D, Cherns PD, Costa PMFJ, McAleese C, Mayrhofer PH and Humphreys CJ (2011). Towards predictive modeling of near-edge structures in electron energy-loss spectra of AlN-based ternary alloys. American Physical Society (Aps)  Physical Review B  vol. 83, (16) 10.1103/physrevb.83.165122

Moram MA, Kappers MJ, Massabuau F, Oliver RA and Humphreys CJ (2011). The effects of Si doping on dislocation movement and tensile stress in GaN films. Aip Publishing  Journal of Applied Physics  vol. 109, (7) 10.1063/1.3553841

Humphreys CJ (2011). The Mystery of the Last Supper. Cambridge University Press (Cup)  10.1017/cbo9780511973871

Watson-Parris D, Godfrey MJ, Dawson P, Oliver RA, Galtrey MJ, Kappers MJ and Humphreys CJ (2011). Carrier localization mechanisms in InxGa1-xN/GaN quantum wells. American Physical Society (Aps)  Physical Review B  vol. 83, (11) 10.1103/physrevb.83.115321

Zhu D and Humphreys CJ (2011). Lighting. Fundamentals of Materials For Energy and Environmental Sustainability  Cambridge University Press (Cup)  10.1017/cbo9780511718786.041

Chee AKW, Broom RF, Humphreys CJ and Bosch EGT (2011). A quantitative model for doping contrast in the scanning electron microscope using calculated potential distributions and Monte Carlo simulations. Aip Publishing  Journal of Applied Physics  vol. 109, (1) 10.1063/1.3524186

Zhu D, McAleese C, Häberlen M, Salcianu C, Thrush T, Kappers M, Phillips A, Lane P, Kane M, Wallis D, Martin T, Astles M, Hylton N, Dawson P and Humphreys C (2011). Efficiency measurement of GaN-based quantum well and light-emitting diode structures grown on silicon substrates. Aip Publishing  Journal of Applied Physics  vol. 109, (1) 10.1063/1.3530602

2010

Moram MA, Sadler TC, Häberlen M, Kappers MJ and Humphreys CJ (2010). Dislocation movement in GaN films. Aip Publishing  Applied Physics Letters  vol. 97, (26) 10.1063/1.3532965

Radtke G, Couillard M, Botton GA, Zhu D and Humphreys CJ (2010). Scanning transmission electron microscopy investigation of the Si(111)/AlN interface grown by metalorganic vapor phase epitaxy. Aip Publishing  Applied Physics Letters  vol. 97, (25) 10.1063/1.3527928

Chang TY, Moram MA, McAleese C, Kappers MJ and Humphreys CJ (2010). Inclined dislocation arrays in AlGaN/AlGaN quantum well structures emitting at 290 nm. Aip Publishing  Journal of Applied Physics  vol. 108, (12) 10.1063/1.3525622

Bennett SE, Ulfig RM, Clifton PH, Kappers MJ, Barnard JS, Humphreys CJ and Oliver RA (2010). Atom probe tomography and transmission electron microscopy of a Mg-doped AlGaN/GaN superlattice. Elsevier  Ultramicroscopy  vol. 111, (3) 207-211. 10.1016/j.ultramic.2010.11.028

Hao R, Zhu T, Häberlen M, Chang TY, Kappers MJ, Oliver RA, Humphreys CJ and Moram MA (2010). The effects of annealing on non-polar (112¯0) a-plane GaN films. Elsevier  Journal of Crystal Growth  vol. 312, (23) 3536-3543. 10.1016/j.jcrysgro.2010.08.041

Schulz S, Badcock TJ, Moram MA, Dawson P, Kappers MJ, Humphreys CJ and O’Reilly EP (2010). Electronic and optical properties of nonpolar a-plane GaN quantum wells. American Physical Society (Aps)  Physical Review B  vol. 82, (12) 10.1103/physrevb.82.125318

Oliver RA, Bennett SE, Zhu T, Beesley DJ, Kappers MJ, Saxey DW, Cerezo A and Humphreys CJ (2010). Microstructural origins of localization in InGaN quantum wells. Iop Publishing  Journal of Physics D  vol. 43, (35) 10.1088/0022-3727/43/35/354003

Kurniawan O, Tan CC, Ong VKS, Li E and Humphreys CJ (2010). A Direct Method for Charge Collection Probability Computation Using the Reciprocity Theorem. Institute of Electrical and Electronics Engineers (Ieee)  Ieee Transactions On Electron Devices  vol. 57, (10) 2455-2461. 10.1109/ted.2010.2056291

Häberlen M, Badcock TJ, Moram MA, Hollander JL, Kappers MJ, Dawson P, Humphreys CJ and Oliver RA (2010). Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth. Aip Publishing  Journal of Applied Physics  vol. 108, (3) 10.1063/1.3460641

Humphreys C, Oliver R, Kappers M, Bennett , Parris D, Dawson P, Godfrey M, Clifton P, Larson D, Ulfig R, Saxey D and Cerezo A (2010). Looking Inside the Fascinating Nanoworld Controlling Light Emission from InGaN/GaN Quantum Well Devices. Oxford University Press (Oup)  Microscopy and Microanalysis  vol. 16, (S2) 1890-1891. 10.1017/s1431927610059854

Bennett SE, Holec D, Kappers MJ, Humphreys CJ and Oliver RA (2010). Imaging dislocations in gallium nitride across broad areas using atomic force microscopy. Aip Publishing  Review of Scientific Instruments  vol. 81, (6) 10.1063/1.3430539

Jiang B, Zuo JM, Holec D, Humphreys CJ, Spackman M and Spence JCH (2010). Combined structure‐factor phase measurement and theoretical calculations for mapping of chemical bonds in GaN. International Union of Crystallography (Iucr)  Acta Crystallographica Section a: Foundations and Advances  vol. 66, (4) 446-450. 10.1107/s0108767310008664

Ashraf H, Rao DVS, Gogova D, Siche D, Fornari R, Humphreys CJ and Hageman PR (2010). Reduction of the dislocation density in HVPE-grown GaN epi-layers by an in situ SiNx treatment. Elsevier  Journal of Crystal Growth  vol. 312, (4) 595-600. 10.1016/j.jcrysgro.2009.11.043

Moram MA, Johnston CF, Kappers MJ and Humphreys CJ (2010). Measuring dislocation densities in nonpolar a-plane GaN films using atomic force microscopy. Iop Publishing  Journal of Physics D  vol. 43, (5) 10.1088/0022-3727/43/5/055303

Kappers MJ, Moram MA, Rao DVS, McAleese C and Humphreys CJ (2010). Low dislocation density GaN growth on high-temperature AlN buffer layers on (0001) sapphire. Elsevier  Journal of Crystal Growth  vol. 312, (3) 363-367. 10.1016/j.jcrysgro.2009.11.014

2009

Taylor RA, Jarjour AF, Collins DP, Holmes MJ, Oliver RA, Kappers MJ and Humphreys CJ (2009). Cavity Enhancement of Single Quantum Dot Emission in the Blue. Springer Nature  Discover Nano  vol. 5, (3) 10.1007/s11671-009-9514-4

Moram MA, Zhang Y, Joyce TB, Holec D, Chalker PR, Mayrhofer PH, Kappers MJ and Humphreys CJ (2009). Structural properties of wurtzitelike ScGaN films grown by NH3-molecular beam epitaxy. Aip Publishing  Journal of Applied Physics  vol. 106, (11) 10.1063/1.3268466

Sumner J, Oliver RA, Kappers MJ and Humphreys CJ (2009). Scanning capacitance microscopy studies of unintentional doping in epitaxial lateral overgrowth GaN. Aip Publishing  Journal of Applied Physics  vol. 106, (10) 10.1063/1.3259379

Moram MA, Oliver RA, Kappers MJ and Humphreys CJ (2009). The Spatial Distribution of Threading Dislocations in Gallium Nitride Films. Wiley  Advanced Materials  vol. 21, (38‐39) 3941-3944. 10.1002/adma.200901095

Charash R, Maaskant PP, Lewis L, McAleese C, Kappers MJ, Humphreys CJ and Corbett B (2009). Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes. Aip Publishing  Applied Physics Letters  vol. 95, (15) 10.1063/1.3244203

Moram MA, Ghedia CS, Rao DVS, Barnard JS, Zhang Y, Kappers MJ and Humphreys CJ (2009). On the origin of threading dislocations in GaN films. Aip Publishing  Journal of Applied Physics  vol. 106, (7) 10.1063/1.3225920

Oliver RA, Sumner J, Kappers MJ and Humphreys CJ (2009). Morphological changes of InGaN epilayers during annealing assessed by spectral analysis of atomic force microscopy images. Aip Publishing  Journal of Applied Physics  vol. 106, (5) 10.1063/1.3212971

Moram MA, Johnston CF, Kappers MJ and Humphreys CJ (2009). Investigating stacking faults in nonpolar gallium nitride films using X-ray diffraction. Elsevier  Physica B Condensed Matter  vol. 404, (16) 2189-2191. 10.1016/j.physb.2009.04.010

Hertkorn J, Thapa SB, Wunderer T, Scholz F, Wu ZH, Wei QY, Ponce FA, Moram MA, Humphreys CJ, Vierheilig C and Schwarz UT (2009). Highly conductive modulation doped composition graded p-AlGaN/(AlN)/GaN multiheterostructures grown by metalorganic vapor phase epitaxy. Aip Publishing  Journal of Applied Physics  vol. 106, (1) 10.1063/1.3160312

Moram MA, Johnston CF, Kappers MJ and Humphreys CJ (2009). The effects of film surface roughness on x-ray diffraction of nonpolar gallium nitride films. Iop Publishing  Journal of Physics D  vol. 42, (13) 10.1088/0022-3727/42/13/135407

Badcock TJ, Dawson P, Kappers MJ, McAleese C, Hollander JL, Johnston CF, Rao DVS, Sanchez AM and Humphreys CJ (2009). Optical polarization anisotropy of a-plane GaN/AlGaN multiple quantum well structures grown on r-plane sapphire substrates. Aip Publishing  Journal of Applied Physics  vol. 105, (12) 10.1063/1.3156688

Rao DVS, McLaughlin K, Kappers MJ and Humphreys CJ (2009). Lattice distortions in GaN on sapphire using the CBED–HOLZ technique. Elsevier  Ultramicroscopy  vol. 109, (10) 1250-1255. 10.1016/j.ultramic.2009.05.018

Moram MA, Johnston CF, Kappers MJ and Humphreys CJ (2009). Defect reduction in nonpolar and semipolar GaN using scandium nitride interlayers. Elsevier  Journal of Crystal Growth  vol. 311, (12) 3239-3242. 10.1016/j.jcrysgro.2009.03.029

Johnston CF, Kappers MJ, Moram MA, Hollander JL and Humphreys CJ (2009). Assessment of defect reduction methods for nonpolar a-plane GaN grown on r-plane sapphire. Elsevier  Journal of Crystal Growth  vol. 311, (12) 3295-3299. 10.1016/j.jcrysgro.2009.03.044

Moram MA, Johnston CF, Hollander JL, Kappers MJ and Humphreys CJ (2009). Understanding x-ray diffraction of nonpolar gallium nitride films. Aip Publishing  Journal of Applied Physics  vol. 105, (11) 10.1063/1.3129307

Collins D, Jarjour A, Hadjipanayi M, Taylor R, Oliver R, Kappers M, Humphreys C and Tahraoui A (2009). Two-photon autocorrelation measurements on a single InGaN/GaN quantum dot. Iop Publishing  Nanotechnology  vol. 20, (24) 10.1088/0957-4484/20/24/245702

Johnston CF, Moram MA, Kappers MJ and Humphreys CJ (2009). Defect reduction in (112¯2) semipolar GaN grown on m-plane sapphire using ScN interlayers. Aip Publishing  Applied Physics Letters  vol. 94, (16) 10.1063/1.3119321

Johnston CF, Kappers MJ and Humphreys CJ (2009). Microstructural evolution of nonpolar (11-20) GaN grown on (1-102) sapphire using a 3D-2D method. Aip Publishing  Journal of Applied Physics  vol. 105, (7) 10.1063/1.3103305

Holec D, Rao DVS and Humphreys CJ (2009). HANSIS software tool for the automated analysis of HOLZ lines. Elsevier  Ultramicroscopy  vol. 109, (7) 837-844. 10.1016/j.ultramic.2009.03.026

Hall JL, Moram MA, Sanchez A, Novikov SV, Kent AJ, Foxon CT, Humphreys CJ and Campion RP (2009). Growth of ScN epitaxial films by plasma-assisted molecular beam epitaxy. Elsevier  Journal of Crystal Growth  vol. 311, (7) 2054-2057. 10.1016/j.jcrysgro.2008.11.084

Moss DM, Akimov AV, Kent AJ, Glavin BA, Kappers MJ, Hollander JL, Moram MA and Humphreys CJ (2009). Coherent terahertz acoustic vibrations in polar and semipolar gallium nitride-based superlattices. Aip Publishing  Applied Physics Letters  vol. 94, (1) 10.1063/1.3056653

2008

Holec D, Zhang Y, Rao DVS, Kappers MJ, McAleese C and Humphreys CJ (2008). Equilibrium critical thickness for misfit dislocations in III-nitrides. Aip Publishing  Journal of Applied Physics  vol. 104, (12) 10.1063/1.3033553

Jarjour AF, Taylor RA, Oliver RA, Kappers MJ, Humphreys CJ and Tahraoui A (2008). Electrically driven single InGaN/GaN quantum dot emission. Aip Publishing  Applied Physics Letters  vol. 93, (23) 10.1063/1.3044395

Moram MA, Barber ZH and Humphreys CJ (2008). The effect of oxygen incorporation in sputtered scandium nitride films. Elsevier  Thin Solid Films  vol. 516, (23) 8569-8572. 10.1016/j.tsf.2008.05.050

Badcock TJ, Dawson P, Kappers MJ, McAleese C, Hollander JL, Johnston CF, Rao DVS, Sanchez AM and Humphreys CJ (2008). Optical properties of GaN/AlGaN quantum wells grown on nonpolar substrates. Aip Publishing  Applied Physics Letters  vol. 93, (10) 10.1063/1.2971205

Oliver RA, Van der Laak NK, Kappers MJ and Humphreys CJ (2008). Insights into the growth mechanism of InxGa1−xN epitaxial nanostructures formed using a silane predose. Elsevier  Journal of Crystal Growth  vol. 310, (15) 3459-3465. 10.1016/j.jcrysgro.2008.05.001

Galtrey MJ, Oliver RA, Kappers MJ, Humphreys CJ, Clifton PH, Larson D, Saxey DW and Cerezo A (2008). Three-dimensional atom probe analysis of green- and blue-emitting InxGa1−xN∕GaN multiple quantum well structures. Aip Publishing  Journal of Applied Physics  vol. 104, (1) 10.1063/1.2938081

Oliver RA, Galtrey MJ and Humphreys CJ (2008). High resolution transmission electron microscopy and three-dimensional atom probe microscopy as complementary techniques for the high spatial resolution analysis of GaN based quantum well systems. Sage Publications  Materials Science and Technology  vol. 24, (6) 675-681. 10.1179/174328408x270301

Moram MA, Vickers ME, Kappers MJ and Humphreys CJ (2008). The effect of wafer curvature on x-ray rocking curves from gallium nitride films. Aip Publishing  Journal of Applied Physics  vol. 103, (9) 10.1063/1.2913514

Moram MA, Novikov SV, Kent AJ, Nörenberg C, Foxon CT and Humphreys CJ (2008). Growth of epitaxial thin films of scandium nitride on 100-oriented silicon. Elsevier  Journal of Crystal Growth  vol. 310, (11) 2746-2750. 10.1016/j.jcrysgro.2008.01.045

Rossetti M, Smeeton TM, Tan W-S, Kauer M, Hooper SE, Heffernan J, Xiu H and Humphreys CJ (2008). Degradation of InGaN∕GaN laser diodes analyzed by microphotoluminescence and microelectroluminescence mappings. Aip Publishing  Applied Physics Letters  vol. 92, (15) 10.1063/1.2908919

Humphreys CJ (2008). Solid-State Lighting. Springer Nature  Mrs Bulletin  vol. 33, (4) 459-470. 10.1557/mrs2008.91

Hollander JL, Kappers MJ, McAleese C and Humphreys CJ (2008). Improvements in a-plane GaN crystal quality by a two-step growth process. Aip Publishing  Applied Physics Letters  vol. 92, (10) 10.1063/1.2830023

Sumner J, Oliver RA, Kappers MJ and Humphreys CJ (2008). Assessment of the performance of scanning capacitance microscopy for n-type gallium nitride. American Vacuum Society  Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena  vol. 26, (2) 611-617. 10.1116/1.2890705

de Sousa Pereira SM, Martins MA, Trindade T, Watson IM, Zhu D and Humphreys CJ (2008). Controlled Integration of Nanocrystals in Inverted Hexagonal Nano‐Pits at the Surface of Light‐Emitting Heterostructures (Adv. Mater. 5/2008). Wiley  Advanced Materials  vol. 20, (5) 10.1002/adma.200890016

de Sousa Pereira SM, Martins MA, Trindade T, Watson IM, Zhu D and Humphreys CJ (2008). Controlled Integration of Nanocrystals in Inverted Hexagonal Nano‐Pits at the Surface of Light‐Emitting Heterostructures. Wiley  Advanced Materials  vol. 20, (5) 1038-1043. 10.1002/adma.200701739

Galtrey MJ, Oliver RA, Kappers MJ, McAleese C, Zhu D, Humphreys CJ, Clifton PH, Larson D and Cerezo A (2008). Compositional inhomogeneity of a high-efficiency InxGa1−xN based multiple quantum well ultraviolet emitter studied by three dimensional atom probe. Aip Publishing  Applied Physics Letters  vol. 92, (4) 10.1063/1.2829592

Zhao LX, Thrush EJ, Humphreys CJ and Phillips WA (2008). Degradation of GaN-based quantum well light-emitting diodes. Aip Publishing  Journal of Applied Physics  vol. 103, (2) 10.1063/1.2829781

Ketteniss N, Oliver RA, McAleese C, Kappers MJ, Zhang Y and Humphreys CJ (2008). The role of strain in controlling the surface morphology of AlxGa1−xN following in situ treatment with SiH4 and NH3. Elsevier  Applied Surface Science  vol. 254, (7) 2124-2130. 10.1016/j.apsusc.2007.08.075

Humphreys CJ, Galtrey MJ, Oliver RA, Kappers MJ, Zhu D, McAleese C, van der Laak NK, Graham DM, Dawson P, Cerezo A and Clifton PH (2008). The atomic structure of GaN-based quantum wells and interfaces. Emc 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany  Springer Nature  10.1007/978-3-540-85226-1_21

2007

Cerezo A, Clifton PH, Galtrey MJ, Humphreys CJ, Kelly TF, Larson DJ, Lozano-Perez S, Marquis EA, Oliver RA, Sha G, Thompson K, Zandbergen M and Alvis RL (2007). Atom probe tomography today. Elsevier  Materials Today  vol. 10, (12) 36-42. 10.1016/s1369-7021(07)70306-1

Emiroglu D, Evans-Freeman JH, Kappers MJ, McAleese C and Humphreys CJ (2007). Deep electronic states associated with a metastable hole trap in n-type GaN. Elsevier  Physica B Condensed Matter  vol. 401, 311-314. 10.1016/j.physb.2007.08.175

Humphreys CJ (2007). Chapter 42. Turning Points in Solid-State, Materials and Surface Science  Royal Society of Chemistry (Rsc)  10.1039/9781847558183-00698

Jarjour AF, Oliver RA, Tahraoui A, Kappers MJ, Humphreys CJ and Taylor RA (2007). Control of the Oscillator Strength of the Exciton in a Single InGaN-GaN Quantum Dot. American Physical Society (Aps)  Physical Review Letters  vol. 99, (19) 10.1103/physrevlett.99.197403

Hylton NP, Dawson P, Kappers MJ, McAleese C and Humphreys CJ (2007). Excitation energy dependence of the photoluminescence spectrum of an InxGa1−xN∕GaN single quantum well structure. American Physical Society (Aps)  Physical Review B  vol. 76, (20) 10.1103/physrevb.76.205403

Jiang N, Qiu J, Humphreys CJ and Spence JCH (2007). Observation of long-range compositional fluctuations in glasses: Implications for atomic and electronic structure. Elsevier  Micron  vol. 39, (6) 698-702. 10.1016/j.micron.2007.10.014

Holec D, Costa PMFJ, Cherns PD and Humphreys CJ (2007). Electron energy loss near edge structure (ELNES) spectra of AlN and AlGaN: A theoretical study using the Wien2k and Telnes programs. Elsevier  Micron  vol. 39, (6) 690-697. 10.1016/j.micron.2007.10.013

Galtrey MJ, Oliver RA, Kappers MJ, Humphreys CJ, Clifton PH, Cerezo A and Smith GDW (2007). Response to “Comment on ‘Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: assessment of possible indium clustering’” [Appl. Phys. Lett. 91, 176101 (2007)]. Aip Publishing  Applied Physics Letters  vol. 91, (17) 10.1063/1.2783977

Moram MA, Kappers MJ, Joyce TB, Chalker PR, Barber ZH and Humphreys CJ (2007). Growth of dislocation-free GaN islands on Si(1 1 1) using a scandium nitride buffer layer. Journal of Crystal Growth  vol. 308, (2) 302-308. 10.1016/j.jcrysgro.2007.09.009

Moram MA, Zhang Y, Kappers MJ, Barber ZH and Humphreys CJ (2007). Dislocation reduction in gallium nitride films using scandium nitride interlayers. Aip Publishing  Applied Physics Letters  vol. 91, (15) 10.1063/1.2794009

Moram MA, Kappers MJ, Joyce TB, Chalker PR, Barber ZH and Humphreys CJ (2007). Growth of dislocation-free GaN islands on Si(111) using a scandium nitride buffer layer. Elsevier  Journal of Crystal Growth  vol. 308, (2) 302-308. 10.1016/j.jcrysgro.2007.09.009

Zhang Y, McAleese C, Xiu H, Humphreys CJ, Lieten RR, Degroote B and Borghs G (2007). Misoriented domains in (0001)-GaN/(111)-Ge grown by molecular beam epitaxy. Aip Publishing  Applied Physics Letters  vol. 91, (9) 10.1063/1.2779099

Cerezo A, Chang L, Clifton P, Galtrey M, Gerstl S, Humphreys C, Mueller M, Oliver R, Smith G and Wu Y (2007). 3D Atom Probe Analysis of Quantum Well and Quantum Dot Materials. Oxford University Press (Oup)  Microscopy and Microanalysis  vol. 13, (S02) 1608-1609. 10.1017/s1431927607071279

Jarjour AF, Taylor RA, Oliver RA, Kappers MJ, Humphreys CJ and Tahraoui A (2007). Cavity-enhanced blue single-photon emission from a single InGaN∕GaN quantum dot. Aip Publishing  Applied Physics Letters  vol. 91, (5) 10.1063/1.2767217

Moram MA, Barber ZH and Humphreys CJ (2007). Accurate experimental determination of the Poisson’s ratio of GaN using high-resolution x-ray diffraction. Aip Publishing  Journal of Applied Physics  vol. 102, (2) 10.1063/1.2749484

van der Laak NK, Oliver RA, Kappers MJ and Humphreys CJ (2007). Characterization of InGaN quantum wells with gross fluctuations in width. Aip Publishing  Journal of Applied Physics  vol. 102, (1) 10.1063/1.2751401

Humphreys CJ (2007). Does In form In-rich clusters in InGaN quantum wells? Taylor & Francis  The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics  vol. 87, (13) 1971-1982. 10.1080/14786430701342172

Galtrey M, Oliver R and Humphreys C (2007). Atom probe provides evidence to question InGaN cluster theory. Compound Semiconductor  vol. 13, (4) 27-30.

van der Laak NK, Oliver RA, Kappers MJ and Humphreys CJ (2007). Role of gross well-width fluctuations in bright, green-emitting single InGaN∕GaN quantum well structures. Aip Publishing  Applied Physics Letters  vol. 90, (12) 10.1063/1.2715166

Founta S, Coraux J, Jalabert D, Bougerol C, Rol F, Mariette H, Renevier H, Daudin B, Oliver RA, Humphreys CJ, Noakes TCQ and Bailey P (2007). Anisotropic strain relaxation in a-plane GaN quantum dots. Aip Publishing  Journal of Applied Physics  vol. 101, (6) 10.1063/1.2713937

Galtrey MJ, Oliver RA, Kappers MJ, Humphreys CJ, Stokes DJ, Clifton PH and Cerezo A (2007). Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: Assessment of possible indium clustering. Aip Publishing  Applied Physics Letters  vol. 90, (6) 10.1063/1.2431573

Fraser IS, Oliver RA, Sumner J, McAleese C, Kappers MJ and Humphreys CJ (2007). Compositional contrast in AlxGa1−xN/GaN heterostructures using scanning spreading resistance microscopy. Elsevier  Applied Surface Science  vol. 253, (8) 3937-3944. 10.1016/j.apsusc.2006.08.028

Graham DM, Dawson P, Chabrol GR, Hylton NP, Zhu D, Kappers MJ, McAleese C and Humphreys CJ (2007). High photoluminescence quantum efficiency InGaN multiple quantum well structures emitting at 380nm. Aip Publishing  Journal of Applied Physics  vol. 101, (3) 10.1063/1.2434823

Chee AKW, Rodenburg C and Humphreys CJ (2007). The Effect of Surface States on Secondary Electron (SE) Dopant Contrast from Silicon p-n Junctions. Springer Nature  Mrs Advances  vol. 1026, 10.1557/proc-1026-c04-02

2006

Ong VKS, Kurniawan O, Moldovan G and Humphreys CJ (2006). A method of accurately determining the positions of the edges of depletion regions in semiconductor junctions. Aip Publishing  Journal of Applied Physics  vol. 100, (11) 10.1063/1.2369652

Graham DM, Dawson P, Godfrey MJ, Kappers MJ and Humphreys CJ (2006). Resonant excitation photoluminescence studies of InGaN∕GaN single quantum well structures. Aip Publishing  Applied Physics Letters  vol. 89, (21) 10.1063/1.2392820

Moldovan G, Kazemian P, Edwards PR, Ong VKS, Kurniawan O and Humphreys CJ (2006). Low-voltage cross-sectional EBIC for characterisation of GaN-based light emitting devices. Elsevier  Ultramicroscopy  vol. 107, (4-5) 382-389. 10.1016/j.ultramic.2006.10.002

Spence⊥ JCH, Kolar HR, Hembree G, Humphreys CJ, Barnard J, Datta R, Koch C, Ross FM and Justo JF (2006). Imaging dislocation cores – the way forward. Taylor & Francis  The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics  vol. 86, (29-31) 4781-4796. 10.1080/14786430600776322

Moram MA, Joyce TB, Chalker PR, Barber ZH and Humphreys CJ (2006). Microstructure of epitaxial scandium nitride films grown on silicon. Elsevier  Applied Surface Science  vol. 252, (24) 8385-8387. 10.1016/j.apsusc.2005.11.069

Kazemian P, Mentink SAM, Rodenburg C and Humphreys CJ (2006). High resolution quantitative two-dimensional dopant mapping using energy-filtered secondary electron imaging. Aip Publishing  Journal of Applied Physics  vol. 100, (5) 10.1063/1.2335980

Kazemian P, Mentink SAM, Rodenburg C and Humphreys CJ (2006). Quantitative secondary electron energy filtering in a scanning electron microscope and its applications. Elsevier  Ultramicroscopy  vol. 107, (2-3) 140-150. 10.1016/j.ultramic.2006.06.003

Moram MA, Barber ZH, Humphreys CJ, Joyce TB and Chalker PR (2006). Young’s modulus, Poisson’s ratio, and residual stress and strain in (111)-oriented scandium nitride thin films on silicon. Aip Publishing  Journal of Applied Physics  vol. 100, (2) 10.1063/1.2217106

Oliver RA, Kappers MJ and Humphreys CJ (2006). Insights into the origin of threading dislocations in GaN∕Al2O3 from atomic force microscopy. Aip Publishing  Applied Physics Letters  vol. 89, (1) 10.1063/1.2219747

Moldovan G, Roe MJ, Harrison I, Kappers M, Humphreys CJ and Brown PD (2006). Effects of KOH etching on the properties of Ga-polar n-GaN surfaces. Taylor & Francis  The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics  vol. 86, (16) 2315-2327. 10.1080/14786430500522628

Kazemian P, Twitchett AC, Humphreys CJ and Rodenburg C (2006). Site-specific dopant profiling in a scanning electron microscope using focused ion beam prepared specimens. Aip Publishing  Applied Physics Letters  vol. 88, (21) 10.1063/1.2207552

Zhu D, Kappers MJ, Costa PMFJ, McAleese C, Rayment FDG, Chabrol GR, Graham DM, Dawson P, Thrush EJ, Mullins JT and Humphreys CJ (2006). A comparative study of near‐UV emitting InGaN quantum wells with AlGaN and AlInGaN barriers. Wiley  Physica Status Solidi (a) – Applications and Materials Science  vol. 203, (7) 1819-1823. 10.1002/pssa.200565250

Jarjour AF, Green AM, Parker TJ, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ, Humphreys CJ, Martin RW and Watson IM (2006). Two-photon absorption from single InGaN/GaN quantum dots. Elsevier  Physica E Low-Dimensional Systems and Nanostructures  vol. 32, (1-2) 119-122. 10.1016/j.physe.2005.12.022

Oliver RA, Kappers MJ, Sumner J, Datta R and Humphreys CJ (2006). Highlighting threading dislocations in MOVPE-grown GaN using an in situ treatment with SiH4 and NH3. Elsevier  Journal of Crystal Growth  vol. 289, (2) 506-514. 10.1016/j.jcrysgro.2005.12.075

Smeeton T and Humphreys C (2006). Perspectives on Electronic and Optoelectronic Materials. Springer Handbook of Electronic and Photonic Materials  Springer Nature  10.1007/978-0-387-29185-7_1

Xiu H, Costa PM, Kauer M, Smeeton TM, Hooper SE, Heffernan J and Humphreys CJ (2006). Study of Defects in p-type Layers in III-nitride Laser Diode Structures Grown by Molecular Beam Epitaxy. Springer Nature  Mrs Advances  vol. 955, 10.1557/proc-0955-i04-07

2005

van der Laak NK, Oliver RA, Kappers MJ and Humphreys CJ (2005). Quantum Well Network Structures: Investigating Long-range Thickness Fluctuations in Single InGaN/GaN Quantum Wells. Springer Nature  Mrs Advances  vol. 892, (1) 10.1557/proc-0892-ff32-03

Moram MA, Joyce TB, Chalker PR, Barber ZH and Humphreys CJ (2005). Microstructure and Strain-Free Lattice Parameters of SCxGa1-xN Films. Springer Nature  Mrs Advances  vol. 892, (1) 10.1557/proc-0892-ff28-07

Cherns PD, McAleese C, Barnard JS, Kappers MJ and Humphreys CJ (2005). A TEM Investigation of Crack Reduction in AlGaN/GaN Heterostructures Using an AlN Interlayer. Springer Nature  Mrs Advances  vol. 892, (1) 10.1557/proc-0892-ff27-12

Martinez CE, Stanton NM, Kent AJ, Graham DM, Dawson P, Kappers MJ and Humphreys CJ (2005). Determination of relative internal quantum efficiency in InGaN∕GaN quantum wells. Aip Publishing  Journal of Applied Physics  vol. 98, (5) 10.1063/1.2033144

Robinson JW, Rice JH, Lee KH, Na JH, Taylor RA, Hasko DG, Oliver RA, Kappers MJ, Humphreys CJ and Briggs GAD (2005). Quantum-confined Stark effect in a single InGaN quantum dot under a lateral electric field. Aip Publishing  Applied Physics Letters  vol. 86, (21) 10.1063/1.1935044

Humphreys C (2005). Science and the Miracles of Exodus. Edp Sciences  Europhysics News  vol. 36, (3) 93-96. 10.1051/epn:2005306

Graham DM, Soltani-Vala A, Dawson P, Godfrey MJ, Smeeton TM, Barnard JS, Kappers MJ, Humphreys CJ and Thrush EJ (2005). Optical and microstructural studies of InGaN∕GaN single-quantum-well structures. Aip Publishing  Journal of Applied Physics  vol. 97, (10) 10.1063/1.1897070

Ofori AP, Rossouw CJ and Humphreys CJ (2005). Determining the site occupancy of Ru in the L12 phase of a Ni-base superalloy using ALCHEMI. Elsevier  Acta Materialia  vol. 53, (1) 97-110. 10.1016/j.actamat.2004.09.007

Costa P, Datta R, Kappers M, Vickers M and Humphreys C (2005). Misfit dislocations in green-emitting InGaN/GaN quantum well structures. Springer Nature  Mrs Advances  vol. 892, (1) 10.1557/proc-0892-ff25-01

Oliver RA, Kappers MJ, Sumner J, Datta R and Humphreys CJ (2005). SiH4 exposure of GaN surfaces: A useful tool for highlighting dislocations. Springer Nature  Mrs Advances  vol. 892, (1) 10.1557/proc-0892-ff24-06

Wong ASW, Ho GW, Dunin-Borkowski R, Kasama T, Oliver RA, Costa PMFJ and Humphreys CJ (2005). The mean inner potential of GaN measured from nanowires using off-axis electron holography. Springer Nature  Mrs Advances  vol. 892, (1) 10.1557/proc-0892-ff11-02

2004

Oliver RA, Kappers MJ, Humphreys CJ and Briggs GAD (2004). Growth modes in heteroepitaxy of InGaN on GaN. Aip Publishing  Journal of Applied Physics  vol. 97, (1) 10.1063/1.1823581

Chryssou CE, Kenyon AJ, Smeeton TM, Humphreys CJ and Hole DE (2004). Broadband sensitization of 1.53μm Er3+ luminescence in erbium-implanted alumina. Aip Publishing  Applied Physics Letters  vol. 85, (22) 5200-5202. 10.1063/1.1829139

Datta R, Kappers MJ, Barnard JS and Humphreys CJ (2004). Revealing all types of threading dislocations in GaN with improved contrast in a single plan view image. Aip Publishing  Applied Physics Letters  vol. 85, (16) 3411-3413. 10.1063/1.1807962

Rice JH, Robinson JW, Smith JD, Jarjour A, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ, Yasin S and Humphreys CJ (2004). Photoluminescence Studies of Exciton Recombination and Dephasing in Single Ingan Quantum Dots. Institute of Electrical and Electronics Engineers (Ieee)  Ieee Transactions On Nanotechnology  vol. 3, (3) 343-347. 10.1109/tnano.2004.828567

Rice JH, Robinson JW, Jarjour A, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ and Humphreys CJ (2004). Temporal variation in photoluminescence from single InGaN quantum dots. Aip Publishing  Applied Physics Letters  vol. 84, (20) 4110-4112. 10.1063/1.1753653

Humphreys C (2004). Can a Materials Scientist Move Mount Sinai? Springer Nature  Mrs Bulletin  vol. 29, (4) 222-223. 10.1557/mrs2004.65

Moldovan G, Harrison I, Humphreys CJ, Kappers M and Brown PD (2004). Application of the Taguchi method for assessment of surface treatment procedures for Ti/n-type GaN contacts. Sage Publications  Materials Science and Technology  vol. 20, (4) 533-538. 10.1179/026708304225012008

Kaestner B, Schönjahn C and Humphreys CJ (2004). Mapping the potential within a nanoscale undoped GaAs region using a scanning electron microscope. Aip Publishing  Applied Physics Letters  vol. 84, (12) 2109-2111. 10.1063/1.1689755

Campbell LC, Wilkinson MJ, Manz A, Camilleri P and Humphreys CJ (2004). Electrophoretic manipulation of single DNA molecules in nanofabricated capillaries. Royal Society of Chemistry (Rsc)  Lab On a Chip  vol. 4, (3) 225-229. 10.1039/b312592k

Chen GS, Chen G-S, Hsiao HH, Louh RF and Humphreys CJ (2004). Improving Thermal Stability of LiMn2 O 4 Thin Films by In Situ Coating of α ­ MnO2 Using High-Pressure and High-Temperature Sputtering. The Electrochemical Society  Electrochemical and Solid-State Letters  vol. 7, (8) a235-a238. 10.1149/1.1758931

Datta R, Kappers MJ, Barnard JS and Humphreys CJ (2004). Reduction of Threading Dislocations in GaN grown on ‘c’ plane sapphire by MOVPE. Springer Nature  Mrs Advances  vol. 831, 10.1557/proc-831-e8.8

Charles MB, Kappers MJ and Humphreys CJ (2004). Growth of Uncracked Al0.80Ga0.20N/GaN DBR on Si(111). Springer Nature  Mrs Advances  vol. 831, (1) 377-381. 10.1557/proc-831-e3.17

2003

Smeeton TM, Kappers MJ, Barnard JS, Vickers ME and Humphreys CJ (2003). Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope. Aip Publishing  Applied Physics Letters  vol. 83, (26) 5419-5421. 10.1063/1.1636534

Belyaev AE, Foxon CT, Novikov SV, Makarovsky O, Eaves L, Kappers MJ and Humphreys CJ (2003). Comment on “AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy” [Appl. Phys. Lett. 81, 1729 (2002)]. Aip Publishing  Applied Physics Letters  vol. 83, (17) 3626-3627. 10.1063/1.1622987

Robinson JW, Rice JH, Jarjour A, Smith JD, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ, Humphreys CJ and Arakawa Y (2003). Time-resolved dynamics in single InGaN quantum dots. Aip Publishing  Applied Physics Letters  vol. 83, (13) 2674-2676. 10.1063/1.1614831

Novikov SV, Zhao LX, Winser AJ, Kappers MJ, Barnard JS, Harrison I, Humphreys CJ and Foxon CT (2003). Blue emission from As-doped GaN films grown by molecular beam epitaxy on GaN templates. Elsevier  Journal of Crystal Growth  vol. 256, (3-4) 237-242. 10.1016/s0022-0248(03)01359-9

Vickers ME, Kappers MJ, Smeeton TM, Thrush EJ, Barnard JS and Humphreys CJ (2003). Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering. Aip Publishing  Journal of Applied Physics  vol. 94, (3) 1565-1574. 10.1063/1.1587251

Oliver RA, Briggs GAD, Kappers MJ, Humphreys CJ, Yasin S, Rice JH, Smith JD and Taylor RA (2003). InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal. Aip Publishing  Applied Physics Letters  vol. 83, (4) 755-757. 10.1063/1.1595716

Schönjahn C, Broom RF, Humphreys CJ, Howie A and Mentink SAM (2003). Optimizing and quantifying dopant mapping using a scanning electron microscope with a through-the-lens detector. Aip Publishing  Applied Physics Letters  vol. 83, (2) 293-295. 10.1063/1.1592302

Mavroidis C, Harris JJ, Kappers MJ, Humphreys CJ and Bougrioua Z (2003). Detailed interpretation of electron transport in n-GaN. Aip Publishing  Journal of Applied Physics  vol. 93, (11) 9095-9103. 10.1063/1.1571220

Pope IA, Smowton PM, Blood P, Thomson JD, Kappers MJ and Humphreys CJ (2003). Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm. Aip Publishing  Applied Physics Letters  vol. 82, (17) 2755-2757. 10.1063/1.1570515

2002

Schönjahn C, Humphreys CJ and Glick M (2002). Energy-filtered imaging in a field-emission scanning electron microscope for dopant mapping in semiconductors. Aip Publishing  Journal of Applied Physics  vol. 92, (12) 7667-7671. 10.1063/1.1525862

Cho HK, Lee JY, Sharma N, Humphreys CJ, Yang GM, Kim CS, Song JH and Yu PW (2002). Response to “Comment on ‘Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells’ ” [Appl. Phys. Lett. 81, 3100 (2002)]. Aip Publishing  Applied Physics Letters  vol. 81, (16) 3102-3103. 10.1063/1.1515887

Keast VJ, Scott AJ, Kappers MJ, Foxon CT and Humphreys CJ (2002). Electronic structure of GaN and InxGa1-xN measured with electron energy-loss spectroscopy. American Physical Society (Aps)  Physical Review B  vol. 66, (12) 10.1103/physrevb.66.125319

Elliott SL, Broom RF and Humphreys CJ (2002). Dopant profiling with the scanning electron microscope—A study of Si. Aip Publishing  Journal of Applied Physics  vol. 91, (11) 9116-9122. 10.1063/1.1476968

Chen GS, Lee PY, Boothroyd CB and Humphreys CJ (2002). Crystallization transformations in vacuum-deposited amorphous aluminum fluoride self-developing thin-film resists induced by electron-beam irradiation. American Vacuum Society  Journal of Vacuum Science & Technology a Vacuum Surfaces and Films  vol. 20, (3) 986-990. 10.1116/1.1464842

Kenyon AJ, Chryssou CE, Pitt CW, Shimizu-Iwayama T, Hole DE, Sharma N and Humphreys CJ (2002). Luminescence from erbium-doped silicon nanocrystals in silica: Excitation mechanisms. Aip Publishing  Journal of Applied Physics  vol. 91, (1) 367-374. 10.1063/1.1419210

Thomas SM and Humphreys C (2002). Colin Humphreys - A practical physicist having fun in the world of materials. Materials World  vol. 10, (1) 11-11.

Humphreys CJ (2002). Chapter 2.9.1 Theory of Electron Scattering and Electron Diffraction. Scattering  Elsevier  10.1016/b978-012613760-6/50069-3

2001

Bright AN, Sharma N and Humphreys CJ (2001). Analysis of contacts and V‐defects in GaN device structures by transmission electron microscopy. Oxford University Press (Oup)  Microscopy  vol. 50, (6) 489-495. 10.1093/jmicro/50.6.489

Bright AN and Humphreys CJ (2001). Identification of interfacial layers in Ohmic contacts to n-type GaN and AlxGa1-xN/GaN heterostructures using high-resolution electron microscopy. Taylor & Francis  Philosophical Magazine B  vol. 81, (11) 1725-1744. 10.1080/13642810110079962

Cho HK, Lee JY, Sharma N, Humphreys CJ, Yang GM, Kim CS, Song JH and Yu PW (2001). Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells. Aip Publishing  Applied Physics Letters  vol. 79, (16) 2594-2596. 10.1063/1.1410362

Cho HK, Lee JY, Kim CS, Yang GM, Sharma N and Humphreys C (2001). Microstructural characterization of InGaN/GaN multiple quantum wells with high indium composition. Elsevier  Journal of Crystal Growth  vol. 231, (4) 466-473. 10.1016/s0022-0248(01)01522-6

Bougrioua Z, Moerman I, Sharma N, Wallis RH, Cheyns J, Jacobs K, Thrush EJ, Considine L, Beanland R, Farvacque J-L and Humphreys C (2001). Material optimisation for AlGaN/GaN HFET applications. Elsevier  Journal of Crystal Growth  vol. 230, (3-4) 573-578. 10.1016/s0022-0248(01)01303-3

Sharma N, Tricker D, Thomas P, Bougrioua Z, Jacobs K, Cheyns J, Moerman I, Thrush T, Considine L, Boyd A and Humphreys C (2001). Chemical mapping of InGaN MQWs. Elsevier  Journal of Crystal Growth  vol. 230, (3-4) 438-441. 10.1016/s0022-0248(01)01252-0

Mavroidis C, Harris JJ, Kappers MJ, Sharma N, Humphreys CJ and Thrush EJ (2001). Observation of thermally activated conduction at a GaN–sapphire interface. Aip Publishing  Applied Physics Letters  vol. 79, (8) 1121-1123. 10.1063/1.1395525

Keast VJ, Sharma N, Kappers M and Humphreys CJ (2001). Electron Energy Loss Spectroscopy (EELS) of GaN Alloys and Quantum Wells. Oxford University Press (Oup)  Microscopy and Microanalysis  vol. 7, (S2) 1182-1183. 10.1017/s1431927600031986

Ofori AP and Humphreys CJ (2001). Atomic Site Occupancy of Platinum Group Metals in the γ’ (Ll2) Phase of a γ-γ’ Complex Nickel Base Superalloy Using Alchemi (Atomic Location by Channnelling Enhanced Microanalysis). Oxford University Press (Oup)  Microscopy and Microanalysis  vol. 7, (S2) 346-347. 10.1017/s143192760002780x

Thomas MDR, Ahmed H, Sanderson KM, Shephard DS, Johnson BFG, Ozkaya D, Sharma N and Humphreys C (2001). Effects of electron-beam exposure on a ruthenium nanocluster polymer. Aip Publishing  Journal of Applied Physics  vol. 90, (2) 947-952. 10.1063/1.1379780

Pankhurst DA, Botton GA and Humphreys CJ (2001). Local symmetry and bonding effects on electron energy-loss near-edge structures: Ab initio study of an NiAl grain boundary. American Physical Society (Aps)  Physical Review B  vol. 63, (20) 10.1103/physrevb.63.205117

Kenyon AJ, Chryssou CE, Pitt CW, Shimizu-Iwayama T, Hole DE, Sharma N and Humphreys CJ (2001). Broad-band and flashlamp pumping of 1.53 μm emission from erbium-doped silicon nanocrystals. Elsevier  Materials Science and Engineering B  vol. 81, (1-3) 19-22. 10.1016/s0921-5107(00)00677-2

Bright AN, Thomas PJ, Weyland M, Tricker DM, Humphreys CJ and Davies R (2001). Correlation of contact resistance with microstructure for Au/Ni/Al/Ti/AlGaN/GaN ohmic contacts using transmission electron microscopy. Aip Publishing  Journal of Applied Physics  vol. 89, (6) 3143-3150. 10.1063/1.1347003

Bright AN, Tricker DM, Humphreys CJ and Davies R (2001). A transmission electron microscopy study of microstructure evolution with increasing anneal temperature in Ti/Al ohmic contacts to n-GaN. Springer Nature  Journal of Electronic Materials  vol. 30, (3) l13-l16. 10.1007/s11664-001-0030-2

Tatsuoka H, koga T, Matsuda K, Nose Y, Souno Y, Kuwabara H, Brown PD and Humphreys CJ (2001). Microstructure of semiconducting MnSi1.7 and β-FeSi2 layers grown by surfactant-mediated reactive deposition epitaxy. Elsevier  Thin Solid Films  vol. 381, (2) 231-235. 10.1016/s0040-6090(00)01749-1

Sharma N, Cho HK, Lee JY and Humphreys CJ (2001). Chemical mapping of indium rich quantum dots in InGaN/GaN quantum wells. Springer Nature  Mrs Advances  vol. 667, 10.1557/proc-667-g6.7

2000

Saifullah MSM, Kurihara K and Humphreys CJ (2000). Comparative study of sputtered and spin-coatable aluminum oxide electron beam resists. American Vacuum Society  Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena  vol. 18, (6) 2737-2744. 10.1116/1.1323970

Botton GA, Nishino Y and Humphreys CJ (2000). Microstructural evolution and stability of (Fe1−xVx)3Al alloys in relation to the electronic structure. Elsevier  Intermetallics  vol. 8, (9-11) 1209-1214. 10.1016/s0966-9795(00)00043-1

Sharma N, Thomas P, Tricker D and Humphreys C (2000). Chemical mapping and formation of V-defects in InGaN multiple quantum wells. Aip Publishing  Applied Physics Letters  vol. 77, (9) 1274-1276. 10.1063/1.1289904

Pekarskaya E, Botton GA, Jones CN and Humphreys CJ (2000). The effect of annealing on the microstructure and tensile properties of a β/γ′ Ni–Al–Fe alloy. Elsevier  Intermetallics  vol. 8, (8) 903-913. 10.1016/s0966-9795(00)00029-7

Pankhurst DA, Botton GA and Humphreys CJ (2000). The Effect of Local Symmetry on Atomic Resolution EELS Near-Edge Structures: Predictions for Grain Boundaries In NiAl. Oxford University Press (Oup)  Microscopy and Microanalysis  vol. 6, (S2) 186-187. 10.1017/s1431927600033420

Humphreys C (2000). Facing up to the future of materials science and technology. Materials World  vol. 8, (4) 11-13.

Humphreys C (2000). Oxbridge and the public schools. Materials World  vol. 8, (1) 2-3.

Humphreys C (2000). THE NUMBERS IN THE EXODUS FROM EGYPT: A FURTHER APPRAISAL. Brill Academic Publishers  Vetus Testamentum  vol. 50, (3) 323-328. 10.1163/156853300506396

1999

Humphreys CJ (1999). Electrons seen in orbit. Springer Nature  Nature  vol. 401, (6748) 21-22. 10.1038/43323

Saifullah MSM, Botton GA, Boothroyd CB and Humphreys CJ (1999). Electron energy loss spectroscopy studies of the amorphous to crystalline transition in FeF3. Aip Publishing  Journal of Applied Physics  vol. 86, (5) 2499-2504. 10.1063/1.371083

Kaiser U, Khodos I, Brown PD, Chuvilin A, Albrecht M, Humphreys CJ, Fissel A and Richter W (1999). A transmission electron microscopy investigation of SiC films grown on SiC substrates by solid-source molecular beam epitaxy. Springer Nature  Journal of Materials Research  vol. 14, (8) 3226-3236. 10.1557/jmr.1999.0436

Weyher JL, Brown PD, Zauner ARA, Müller S, Boothroyd CB, Foord DT, Hageman PR, Humphreys CJ, Larsen PK, Grzegory I and Porowski S (1999). Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD). Elsevier  Journal of Crystal Growth  vol. 204, (4) 419-428. 10.1016/s0022-0248(99)00217-1

Kaiser U, Brown PD, Khodos I, Humphreys CJ, Schenk HPD and Richter W (1999). The effect of growth condition on the structure of 2H – AlN films deposited on Si(111) by plasma-assisted molecular beam epitaxy. Springer Nature  Journal of Materials Research  vol. 14, (5) 2036-2042. 10.1557/jmr.1999.0275

LIU , PRESTON , BOOTHROYD and HUMPHREYS (1999). Quantitative analysis of ultrathin doping layers in semiconductors using high‐angle annular dark field images. Wiley  Journal of Microscopy  vol. 194, (1) 171-182. 10.1046/j.1365-2818.1999.00458.x

LIU , BOOTHROYD and HUMPHREYS (1999). Energy‐filtered transmission electron microscopy of multilayers in semiconductors. Wiley  Journal of Microscopy  vol. 194, (1) 58-70. 10.1046/j.1365-2818.1999.00459.x

Humphreys CJ (1999). A two‐phase charge‐density real‐space‐pairing model of high‐Tc superconductivity. International Union of Crystallography (Iucr)  Acta Crystallographica Section a: Foundations and Advances  vol. 55, (2‐1) 228-233. 10.1107/s0108767398014093

Humphreys CJ (1999). A two-phase charge-density real-space-pairing model of high-Tc superconductivity. Acta Crystallographica Section a: Foundations of Crystallography  vol. 55, (2 PART I) 228-233. 10.1107/s0108767398014093

Walther T and Humphreys CJ (1999). A quantitative study of compositional profiles of chemical vapour-deposited strained silicon–germanium/silicon layers by transmission electron microscopy. Elsevier  Journal of Crystal Growth  vol. 197, (1-2) 113-128. 10.1016/s0022-0248(98)00930-0

Yonenaga I, Lim S, Shindo D, Brown PD and Humphreys CJ (1999). Structure and Climb of Faulted Dipoles in GaAs. Wiley  Physica Status Solidi (a) – Applications and Materials Science  vol. 171, (1) 53-57. 10.1002/(sici)1521-396x(199901)171:1<53::aid-pssa53>3.0.co;2-i

Smith JP, Eccleston W, Brown PD and Humphreys CJ (1999). Electronic and Structural Properties of Partially Crystallized Silicon Produced by Solid‐Phase Crystallization of As‐Deposited Amorphous Silicon. The Electrochemical Society  Journal of The Electrochemical Society  vol. 146, (1) 306-312. 10.1149/1.1391605

Chen GS and Humphreys CJ (1999). Study of sample thickness dependence in electron-beam irradiation of self-developing inorganic materials. Aip Publishing  Journal of Applied Physics  vol. 85, (1) 148-152. 10.1063/1.369461

1998

Lim S-H, Shindo D, Yonenaga I, Brown PD and Humphreys CJ (1998). Atomic Arrangement of a Z-Shape Faulted Dipole within Deformed GaAs. American Physical Society (Aps)  Physical Review Letters  vol. 81, (24) 5350-5353. 10.1103/physrevlett.81.5350

Matsuda K, Tatsuoka H, Matsunaga K, Isaji K, Kuwabara H, Brown PD, Xin Y, Dunin-Borkowski R and Humphreys CJ (1998). High-Quality Epitaxial MnSi(111) Layers Grown in the Presence of an Sb Flux. Iop Publishing  Japanese Journal of Applied Physics  vol. 37, (12R) 10.1143/jjap.37.6556

Humphreys C (1998). Stuff of dreams. New Scientist  vol. 157, (2126) 44-45.

Ogawa H, Watanabe M, Ohsato H and Humphreys C (1998). Microwave dielectric properties of (Y2-xRx)BaCuO5 (R = rare-earth) solid solutions. Ieee International Symposium On Applications of Ferroelectrics  517-520.

Yonenaga I, Brown PD and Humphreys CJ (1998). Climb of dislocations in GaAs by irradiation. Elsevier  Materials Science and Engineering A  vol. 253, (1-2) 148-150. 10.1016/s0921-5093(98)00723-0

Chen GS, Boothroyd CB and Humphreys CJ (1998). Electron-beam-induced damage in amorphous SiO2 and the direct fabrication of silicon nanostructures. Taylor & Francis  The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics  vol. 78, (2) 491-506. 10.1080/01418619808241915

Nishino Y, Inkson BJ, Ogawa T and Humphreys CJ (1998). Effect of molybdenum substitution on phase stability and high-temperature strength of Fe3 Al alloys. Taylor & Francis  Philosophical Magazine Letters  vol. 78, (2) 97-103. 10.1080/095008398178075

Humphreys C (1998). Shaping the future of materials science. Materials World  vol. 6, (6) 352-355.

Tatsuoka H, Isaji K, Sugiura K, Kuwabara H, Brown PD, Xin Y and Humphreys CJ (1998). Interfacial reaction and defect microstructure of epitaxial MnSb/Si(111) grown by hot-wall epitaxy. Aip Publishing  Journal of Applied Physics  vol. 83, (10) 5504-5508. 10.1063/1.367410

Dudarev SL, Botton GA, Savrasov SY, Humphreys CJ and Sutton AP (1998). Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+U study. American Physical Society (Aps)  Physical Review B  vol. 57, (3) 1505-1509. 10.1103/physrevb.57.1505

Humphreys CJ, Botton GA, Pankhurst DA, Keast VJ and Temmerman WM (1998). Electronic Structure, Charge Transfer and Bonding in Intermetallics Using EELS and Density Functional Theory. Springer Nature  Mrs Advances  vol. 552, 10.1557/proc-552-kk10.1.1

Pekarskaya E, Humphreys CJ and Jones CN (1998). Comparative Study of the Microstructure and Tensile Properties of Ni-Al Alloys with Fe and Cr Additions. Springer Nature  Mrs Advances  vol. 552, 10.1557/proc-552-kk5.18.1

Watanabe M, Ogawa H, Ohsato H and Humphreys C (1998). Microwave dielectric properties of Y2Ba(Cu1-xZnx)O5 solid solutions. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers  vol. 37, (9 PART B) 5360-5363. 10.1143/jjap.37.5360

Matsuda K, Tatsuoka H, Matsunaga K, Isaji K, Kuwabara H, Brown PD, Xin Y, Dunin-Borkowski R and Humphreys CJ (1998). High-quality epitaxial MnSi(111) layers grown in the presence of an Sb flux. Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers  vol. 37, (12A) 6556-6561. 10.1143/JJAP.37.6556

Humphreys C (1998). The Number of People in the Exodus from Egypt: Decoding Mathematically the Very Large Numbers in Numbers I and XXVI. Brill Academic Publishers  Vetus Testamentum  vol. 48, (2) 196-213. 10.1163/1568533982721550

1997

Chen GS and Humphreys CJ (1997). Investigation of the proximity effect in amorphous AlF3 electron-beam resists. American Vacuum Society  Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena  vol. 15, (6) 1954-1960. 10.1116/1.589584

Humphreys C (1997). Book Review: The Economic Laws of Scientific Research, Terence Kealey. Macmillan Press, Basingstoke and London, 1996. £47.50 (hardback). 0-333-56045-0. Cambridge University Press (Cup)  European Review  vol. 5, (4) 443-445. 10.1002/(sici)1234-981x(199710)5:4<443::aid-euro204>3.0.co;2-1

Walther T, Humphreys CJ and Cullis AG (1997). Observation of vertical and lateral Ge segregation in thin undulating SiGe layers on Si by electron energy-loss spectroscopy. Aip Publishing  Applied Physics Letters  vol. 71, (6) 809-811. 10.1063/1.119653

Botton GA and Humphreys CJ (1997). Analysis of EELS near edge structures to study the bonding character in intermetallic alloys. Elsevier  Micron  vol. 28, (4) 313-319. 10.1016/s0968-4328(97)00018-8

Xin Y, Wallis D, Browning N, Sivananthan S, Pennycook S and Humphreys C (1997). Interfaces and Defects in Opto-Electronic Semiconductor Films Studied by Atomic Resolution STEM. Oxford University Press (Oup)  Microscopy and Microanalysis  vol. 3, (S2) 461-462. 10.1017/s1431927600009193

Liu C, Dunin-Borkowski R, Boothroyd C, Brown P and Humphreys C (1997). Characterization of Ultrathin Doping Layers in Semiconductors. Oxford University Press (Oup)  Microscopy and Microanalysis  vol. 3, (4) 352-363. 10.1017/s1431927697970276

Botton GA, Burnell G, Humphreys CJ, Yadav T and Withers JC (1997). Microstructural and electron spectroscopic characterization of carbon nanostructures and nanotubes produced using multimetal catalysts. Elsevier  Journal of Physics and Chemistry of Solids  vol. 58, (7) 1091-1102. 10.1016/s0022-3697(97)00233-3

Wiezorek JMK, Humphreys CJ and Fraser HL (1997). Determining directly from experiment the magnitude of the Burgers vector of glissile c-component dislocations in Ti Al. Taylor & Francis  Philosophical Magazine Letters  vol. 75, (5) 281-290. 10.1080/095008397179534

Xin Y, Brown PD, Humphreys CJ, Cheng TS and Foxon CT (1997). Domain boundaries in epitaxial wurtzite GaN. Aip Publishing  Applied Physics Letters  vol. 70, (10) 1308-1310. 10.1063/1.118520

Xin Y, Brown PD, Dunin-Borkowski RE, Humphreys CJ, Cheng TS and Foxon CT (1997). Microstructural characterisation of GaN(As) films grown on (001) GaP by molecular beam epitaxy. Elsevier  Journal of Crystal Growth  vol. 171, (3-4) 321-332. 10.1016/s0022-0248(96)00663-x

1996

Brown PD and Humphreys CJ (1996). Scanning transmission electron beam induced conductivity investigation of a Si/Si1− x Ge x /Si heterostructure. Aip Publishing  Journal of Applied Physics  vol. 80, (4) 2527-2529. 10.1063/1.363038

Harrowell RV (1996). Missed opportunities for high-temperature superconductivity. Iop Publishing  Physics World  vol. 9, (8) 15-15. 10.1088/2058-7058/9/8/14

Botton GA, Guo GY, Temmerman WM and Humphreys CJ (1996). Experimental and theoretical study of the electronic structure of Fe, Co, and Ni aluminides with the B2 structure. American Physical Society (Aps)  Physical Review B  vol. 54, (3) 1682-1691. 10.1103/physrevb.54.1682

Chen GS, Boothroyd CB and Humphreys CJ (1996). Electron-beam induced crystallization transition in self-developing amorphous AlF3 resists. Aip Publishing  Applied Physics Letters  vol. 69, (2) 170-172. 10.1063/1.117361

Moodie AF, Etheridge J and Humphreys CJ (1996). The Symmetry of Three‐Beam Scattering Equations: Inversion of Three‐Beam Diffraction Patterns from Centrosymmetric Crystals. International Union of Crystallography (Iucr)  Acta Crystallographica Section a: Foundations and Advances  vol. 52, (4) 596-605. 10.1107/s0108767396001171

Inkson BJ and Humphreys CJ (1996). High-resolution electron microscopy study of the junction between a coherent {111} and an incoherent {121} twin boundary in TiAl. Taylor & Francis  The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics  vol. 73, (6) 1647-1661. 10.1080/01418619608243004

Inkson BJ and Humphreys CJ (1996). Dislocations at 120° order interfaces in TiAl. Taylor & Francis  The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics  vol. 73, (5) 1333-1345. 10.1080/01418619608245136

Loginov YY, Brown PD and Humphreys CJ (1996). Effect of a doping impurity on the formation of structural defects in CdTe irradiated by electrons and ions. Physics of The Solid State  vol. 38, (4) 692-697.

Loginov YY, Brown PD and Humphreys CJ (1996). Formation of structural defects in CdTe and CdZnTe heteroepitaxial layers grown on GaAs. Physics of The Solid State  vol. 38, (2) 272-277.

Chen Q, Knowles KM, Humphreys CJ and Wu XF (1996). Atom positions in the R-phase unit cell in TiNi shape memory alloy. Springer Nature  Journal of Materials Science  vol. 31, (16) 4227-4231. 10.1007/bf00356443

Loginov YY, Brown PD and Humphreys CJ (1996). Defect Formation in ZnTe and (Cd,Zn)Te Epitaxial Layers Grown on (001) GaAs. Inorganic Materials  vol. 32, (1) 22-25.

Cheng TS, Foxon CT, Jeffs NJ, Hughes OH, Ren BG, Xin Y, Brown PD, Humphreys CJ, Andranov AV, Lacklison DE, Orton JW and Halliwell M (1996). Growth of GaN films on (001) and (111) GaAs surfaces by a modified MBE method. Springer Nature  Mrs Internet Journal of Nitride Semiconductor Research  vol. 1, (1) 10.1557/s1092578300002040

1995

Wiezorek JMK, Court SA and Humphreys CJ (1995). On the dissociation of prism plane superdislocations in Ti3Al. Taylor & Francis  Philosophical Magazine Letters  vol. 72, (6) 393-403. 10.1080/09500839508242479

Xin Y, Brown PD, Boothroyd CB, Humphreys CJ, Tatsuoka H, Kuwabara H, Oshita M, Nakamura T, Fujiyasu H and Nakanishi Y (1995). The microstructure of MnSb grown on (001) GaAs by hot wall epitaxy. Elsevier  Journal of Crystal Growth  vol. 156, (3) 155-162. 10.1016/0022-0248(95)00276-6

Walther T, Humphreys CJ, Cullis AG and Robbins DJ (1995). A Correlation between Compositional Fluctuations and Surface Undulations in Strained Layer Epitaxy. Trans Tech Publications  10.4028/www.scientific.net/msf.196-201.505

Walther T, Humphreys CJ, Grimshaw MP and Churchill AC (1995). Detection of random alloy fluctuations in high-resolution transmission electron micrographs of AlGaAs. Taylor & Francis  The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics  vol. 72, (4) 1015-1030. 10.1080/01418619508239950

Saunders M, Bird DM, Zaluzec NJ, Burgess WG, Preston AR and Humphreys CJ (1995). Measurement of low-order structure factors for silicon from zone-axis CBED patterns. Elsevier  Ultramicroscopy  vol. 60, (2) 311-323. 10.1016/0304-3991(95)00058-1

Wiezorek JMK and Humphreys CJ (1995). On the hierarchy of planar fault energies in TiAl. Elsevier  Scripta Metallurgica Et Materialia  vol. 33, (3) 451-458. 10.1016/0956-716x(95)00212-e

Brown PD, Loginov YY, Stobbs WM and Humphreys CJ (1995). Microtwin nucleation and propagation in heteroepitaxial II-VI compounds on (001)-oriented GaAs substrates. Taylor & Francis  The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics  vol. 72, (1) 39-57. 10.1080/01418619508239581

Xin Y, Zhou W and Humphreys CJ (1995). HREM studies of the (001) surface of YBa2Cu4O8. Elsevier  Physica C Superconductivity  vol. 249, (3-4) 319-332. 10.1016/0921-4534(95)00327-4

Inkson BJ and Humphreys CJ (1995). High-resolution electron microscopy observation of a 1/2(112) superdislocation in TiAl. Taylor & Francis  Philosophical Magazine Letters  vol. 71, (6) 307-312. 10.1080/09500839508241012

Inkson BJ, Boothroyd CB and Humphreys CJ (1995). Boride morphology in A (Fe, V, B) Ti-alloy containing B2-phase. Elsevier  Acta Metallurgica Et Materialia  vol. 43, (4) 1429-1438. 10.1016/0956-7151(94)00345-i

Brown PD and Humphreys CJ (1995). Assessment of semiconductor epitaxial growth by transmission electron microscopy. Sage Publications  Materials Science and Technology  vol. 11, (1) 54-65. 10.1179/mst.1995.11.1.54

CAMPBELL J and HUMPHREYS C (1995). A FRAMEWORK FOR THE FUTURE. Materials World  vol. 3, (6) 286-287.

1994

WHITE RS and HUMPHREYS CJ (1994). Famines and cataclysmic volcanism. Wiley  Geology Today  vol. 10, (5) 181-185. 10.1111/j.1365-2451.1994.tb00421.x

Burgess WG, Preston AR, Botton GA, Zaluzec NJ and Humphreys CJ (1994). Benefits of energy filtering for advanced convergent beam electron diffraction patterns. Elsevier  Ultramicroscopy  vol. 55, (3) 276-283. 10.1016/0304-3991(94)90062-0

Brown PD, Loginov YY, Mullins JT, Durose K, Brinkman AW and Humphreys CJ (1994). Transmission electron microscopy investigations of II–VI/GaAs heterostructures. Elsevier  Journal of Crystal Growth  vol. 138, (1-4) 538-544. 10.1016/0022-0248(94)90865-6

Wiezorek JMK, Preston AR, Court SA, Fraser HL and Humphreys CJ (1994). Burgers vector determination of decorated dislocations in γ-TiAl by diffraction contrast and large-angle convergent-beam electron diffraction. Taylor & Francis  The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics  vol. 69, (2) 285-299. 10.1080/01418619408244344

1993

White RS and Humphreys C (1993). Evolution and religion. Springer Nature  Nature  vol. 366, (6453) 296-296. 10.1038/366296c0

Inkson BJ, Boothroyd CB and Humphreys CJ (1993). Microstructure of A γ−α2−β TiAl alloy containing iron and vanadium. Elsevier  Acta Metallurgica Et Materialia  vol. 41, (10) 2867-2876. 10.1016/0956-7151(93)90101-w

Chen GS, Boothroyd CB and Humphreys CJ (1993). Novel fabrication method for nanometer-scale silicon dots and wires. Aip Publishing  Applied Physics Letters  vol. 62, (16) 1949-1951. 10.1063/1.109500

1992

Humphreys CJ and Waddington WG (1992). The Jewish Calendar, A Lunar Eclipse and the Date of Christ’s Crucifixion. Tyndale House  Tyndale Bulletin  vol. 43, (2) 10.53751/001c.30487

MORGAN C, CHEN GS, BOOTHROYD C, BAILEY S and HUMPHREYS C (1992). ULTIMATE LIMITS OF LITHOGRAPHY. Physics World  vol. 5, (11) 28-32.

1991

HUMPHREYS C (1991). State of British science. Springer Nature  Nature  vol. 351, (6327) 513-513. 10.1038/351513a0

Humphreys CJ, Maher DM, Eaglesham DJ, Kvam EP and Salisbury IG (1991). The origin of dislocations in multilayers. Edp Sciences  Journal De Physique III  vol. 1, (6) 1119-1130. 10.1051/jp3:1991175

HUMPHREYS CJ (1991). THE STAR OF BETHLEHEM - A COMET IN 5 BC - AND THE DATE OF THE BIRTH OF CHRIST. Quarterly Journal of The Royal Astronomical Society  vol. 32, (4) 389-407.

Humphreys C (1991). 100 keV electron beam damage of metals and oxides. Elsevier  Micron  vol. 22, (1-2) 147-148. 10.1016/0739-6260(91)90133-k

Humphreys CJ (1991). Ceramic Superconductors. Concise Encyclopedia of Advanced Ceramic Materials  Elsevier  10.1016/b978-0-08-034720-2.50028-9

1990

HUMPHREYS C and WADDINGTON WG (1990). Crucifixion date. Springer Nature  Nature  vol. 348, (6303) 684-684. 10.1038/348684a0

Kvam EP, Maher DM and Humphreys CJ (1990). Variation of dislocation morphology with strain in GexSi1−x epilayers on (100)Si. Springer Nature  Journal of Materials Research  vol. 5, (9) 1900-1907. 10.1557/jmr.1990.1900

Humphreys CJ, Bullough TJ, Devenish RW, Maher DM and Turner PS (1990). The interaction of electron beams with solids - Some new effects. Cambridge University Press (Cup)  Microscopy and Microanalysis  vol. 48, (4) 788-789. 10.1017/s0424820100177076

Turner PS, Bullough TJ, Devenish RW, Maher DM and Humphreys CJ (1990). Nanometre hole formation in MgO using electron beams. Taylor & Francis  Philosophical Magazine Letters  vol. 61, (4) 181-193. 10.1080/09500839008202357

Zhang JG, McCartney DG and Humphreys CJ (1990). On the microstructural evolution of sintered Bi-Sr-Ca-Cu-O high-Tc superconductors. Iop Publishing  Superconductor Science and Technology  vol. 3, (4) 10.1088/0953-2048/3/4/006

1989

Humphreys CJ (1989). Book Review: Transmission Electron Microscopy. By L. Reimer. Wiley  Angewandte Chemie International Edition  vol. 28, (12) 1763-1764. 10.1002/anie.198917631

Humphreys CJ (1989). Transmission Electron Microscopy. By L. Reimer. Springer Series in Optical Sciences, Springer‐Verlag, Second Edition, 1989, xiii, 547 pp., paperback, DM 128. – ISBN 3‐540‐50499‐0. Wiley  Angewandte Chemie  vol. 101, (12) 1803-1804. 10.1002/ange.19891011265

Humphreys C (1989). Controlling crystal growth. Springer Nature  Nature  vol. 341, (6244) 689-689. 10.1038/341689a0

Humphreys C (1989). Materials Science and Engineering in Britain. Wiley  Angewandte Chemie International Edition  vol. 28, (8) 1077-1078. 10.1002/anie.198910771

Eaglesham DJ, Kvam EP, Maher DM, Humphreys CJ and Bean JC (1989). Dislocation nucleation near the critical thickness in GeSi/Si strained layers. Taylor & Francis  The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics  vol. 59, (5) 1059-1073. 10.1080/01418618908209837

Devenish RW, Eaglesham DJ, Maher DM and Humphreys CJ (1989). Nanolithography using field emission and conventional thermionic electron sources. Elsevier  Ultramicroscopy  vol. 28, (1-4) 324-329. 10.1016/0304-3991(89)90318-5

Humphreys CJ (1989). Radiation effects. Elsevier  Ultramicroscopy  vol. 28, (1-4) 357-358. 10.1016/0304-3991(89)90325-2

Fraser HL, Maher DM, Knoell RV, Eaglesham DJ, Humphreys CJ and Bean JC (1989). Compositional modulations in Ge x Si1− x heteroepitaxial layers. American Vacuum Society  Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena  vol. 7, (2) 210-213. 10.1116/1.584718

Eaglesham DJ, Maher DM, Fraser HL, Humphreys CJ and Bean JC (1989). Tetragonal and monoclinic forms of Ge x Si1− x epitaxial layers. Aip Publishing  Applied Physics Letters  vol. 54, (3) 222-224. 10.1063/1.101015

Eaglesham DJ, Maher DM, Kvam EP, Bean JC and Humphreys CJ (1989). New Source of Dislocations in GexSi1-x/Si(100) Strained Epitaxial Layers. American Physical Society (Aps)  Physical Review Letters  vol. 62, (2) 187-190. 10.1103/physrevlett.62.187

Humphreys C (1989). Materials science and engineering in Britain. Wiley  Advanced Materials  vol. 1, (8‐9) 249-250. 10.1002/adma.19890010802

Kvam EP, Maher DM and Humphreys CJ (1989). Dislocation Behaviour in GexSi1-x Epilayers on (001)Si. Springer Nature  Mrs Advances  vol. 160, 10.1557/proc-160-71

Bullough TJ, Humphreys CJ and Devenish RW (1989). Electron Beam Induced Nanometre Hole Formation and Surface Modification in Al, Si And MgO. Springer Nature  Mrs Advances  vol. 157, 10.1557/proc-157-323

Humphreys CJ, Eaglesham DJ, Maher DM, Fraser HL and Salisbury I (1989). Strains and Misfit Dislocations at Interfaces. Evaluation of Advanced Semiconductor Materials by Electron Microscopy  Springer Nature  10.1007/978-1-4613-0527-9_15

1988

Eaglesham DJ, Humphreys CJ, Alford NM, Clegg WJ, Harmer MA and Birchall JD (1988). High temperature superconducting ceramics. Elsevier  Materials Science and Engineering B  vol. 1, (3-4) 229-235. 10.1016/0921-5107(88)90003-7

Eaglesham DJ, Kvam EP, Maher DM, Humphreys CJ, Green GS, Tanner BK and Bean JC (1988). X-ray topography of the coherency breakdown in Ge x Si1− x /Si(100). Aip Publishing  Applied Physics Letters  vol. 53, (21) 2083-2085. 10.1063/1.100288

Humphreys CJ, Maher DM, Fraser HL and Eaglesham DJ (1988). Convergent-beam imaging—a transmission electron microscopy technique for investigating small localized distortions in crystals. Taylor & Francis  The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics  vol. 58, (5) 787-798. 10.1080/01418618808209953

BRAUNSTEIN P, DEVENISH R, GALLEZOT P, HEATON BT, HUMPHREYS CJ, KERVENNAL J, MULLEY S and RIES M (1988). ChemInform Abstract: Silica‐Supported Fe‐Pd Bimetallic Particles ‐ Formation from Mixed‐Metal Clusters and Catalytic Activity. Wiley  Cheminform  vol. 19, (42) no-no. 10.1002/chin.198842090

Taylor S, Eccleston W, Ringnalda J, Maher DM, Eaglesham DJ, Humphreys CJ and Godfrey DJ (1988). Plasma Anodisation of Silicon for Advanced VLSI. Edp Sciences  Journal De Physique Archives  vol. 49, (C4) 10.1051/jphyscol:1988482

Braunstein P, Devenish R, Gallezot P, Heaton BT, Humphreys CJ, Kervennal J, Mulley S and Ries M (1988). Silica‐Supported FePd Bimetallic Particles: Formation from Mixed‐Metal Clusters and Catalytic Activity. Wiley  Angewandte Chemie International Edition  vol. 27, (7) 927-929. 10.1002/anie.198809271

Braunstein P, Devenish R, Gallezot P, Heaton BT, Humphreys CJ, Kervennal J, Mulley S and Ries M (1988). Fe‐Pd‐Bimetallpartikel auf SiO2‐Trägern – Bildung aus Heterometallclustern und katalytische Aktivität. Wiley  Angewandte Chemie  vol. 100, (7) 972-973. 10.1002/ange.19881000720

Humphreys CJ, Eaglesham DJ, Maher DM and Fraser HL (1988). CBED and CBIM from semiconductors and superconductors. Elsevier  Ultramicroscopy  vol. 26, (1-2) 13-23. 10.1016/0304-3991(88)90371-3

Huxford NP, Eaglesham DJ and Humphreys CJ (1988). Erratum: Limits on quantitative information from high-resolution electron microscopy of YBa2Cu3O7superconductors. Springer Nature  Nature  vol. 331, (6153) 286-286. 10.1038/331286b0

Eaglesham DJ, Kvam EP, Maher DM, Humphreys CJ and Bean JC (1988). Dislocation Nucleation in GeSi/Si(100) Strained Epilayers. Springer Nature  Mrs Advances  vol. 138, 10.1557/proc-138-397

1987

Huxford NP, Eaglesham DJ and Humphreys CJ (1987). Limits on quantitative information from high-resolution electron microscopy of YBa2Cu3O7 superconductors. Springer Nature  Nature  vol. 329, (6142) 812-813. 10.1038/329812a0

Eaglesham DJ, Humphreys CJ, Alford NM, Clegg WJ, Harmer MA and Birchall JD (1987). New phases in the superconducting Y:Ba:Cu:O system. Aip Publishing  Applied Physics Letters  vol. 51, (6) 457-459. 10.1063/1.98421

Eaglesham DJ, Humphreys CJ, Clegg WJ, Harmer MA, AIford NM and Birchall JD (1987). THE ORTHORHOMBIC AND TETRAGONAL PHASES OF Y 1 Ba 2 Cu 3 O 9-y. Wiley  Advanced Ceramic Materials  vol. 2, (3B) 662-667. 10.1111/j.1551-2916.1987.tb00132.x

Waddington W, Rez P, Grant I and Humphreys C (1987). Erratum: White lines in the L2,3 electron-energy-loss and x-ray absorption spectra of 3d transition metals [Phys. Rev. B 34, 1467 (1986)]. American Physical Society (Aps)  Physical Review B  vol. 35, (10) 5297-5297. 10.1103/physrevb.35.5297

Maher DM, Fraser HL, Humphreys CJ, Knoell RV and Bean JC (1987). Detection and measurement of local distortions in a semiconductor layered structure by convergent-beam electron diffraction. Aip Publishing  Applied Physics Letters  vol. 50, (10) 574-576. 10.1063/1.98139

Berger SD, Salisbury IG, Milne RH, Imeson D and Humphreys CJ (1987). Electron energy-loss spectroscopy studies of nanometre-scale structures in alumina produced by intense electron-beam irradiation. Taylor & Francis  Philosophical Magazine B  vol. 55, (3) 341-358. 10.1080/13642818708208619

Heaton BT, Ingallina P, Devenish R, Humphreys CJ, Ceriotti A, Longoni G and Marchionna M (1987). Analytical electron microscopy of [Ni 38 Pt 6 (CO) 48 H] 5–. Royal Society of Chemistry (Rsc)  Chemical Communications  (10) 765-766. 10.1039/c39870000765

Kvam EP, Eaglesham DJ, Maher DM, Humphreys CJ, Bean JC, Green GS and Tanner BK (1987). The Nucleation and Propagation of Misfit Dislocations aear the Critical Thickness in Ge-Si Strained Epilayers. Springer Nature  Mrs Advances  vol. 104, 10.1557/proc-104-623

Humphreys CJ (1987). High Resolution Electron Microscopy and Convergent Beam Electron Diffraction of Semiconductor Quantum Well Structures. Thin Film Growth Techniques For Low-Dimensional Structures  Springer Nature  10.1007/978-1-4684-9145-6_25

1986

Bullock JF, Titchmarsh JM and Humphreys CJ (1986). STEM/EDX MICOANALYSIS OF COMPOSITIONAL FLUCTUATIONS IN SEMICONDUCTOR MULTI-QUANTUM-WELL STRUCTURES. Semiconductor Science and Technology  vol. 1, (6) 342-345.

Bullock JF, Titchmarsh JM and Humphreys CJ (1986). STEM/EDX microanalysis of compositional fluctuations in semiconductor multi-quantum-well structures. Iop Publishing  Semiconductor Science and Technology  vol. 1, (6) 10.1088/0268-1242/1/6/001

Waddington WG, Rez P, Grant IP and Humphreys CJ (1986). White lines in the L2,3 electron-energy-loss and x-ray absorption spectra of 3d transition metals. American Physical Society (Aps)  Physical Review B  vol. 34, (3) 1467-1473. 10.1103/physrevb.34.1467

Petford AK and Humphreys CJ (1986). Electron‐beam damage observed in the fast proton conductor ammonium/hydronium β''‐alumina: a high‐resolution electron microscope (HREM) study. International Union of Crystallography (Iucr)  Acta Crystallographica Section B: Structural Science, Crystal Engineering and Materials  vol. 42, (3) 224-229. 10.1107/s0108768186098300

Eaglesham DJ, Hetherington CJD and Humphreys CJ (1986). Compositional Studies of Semiconductor Alloys by Bright Field Electron Microscope Imaging of Wedged Crystals. Springer Nature  Mrs Advances  vol. 77, 10.1557/proc-77-473

1985

Davies RA, Kelly MJ, Kerr TM, Hetherington CJD and Humphreys CJ (1985). Geometric and electronic structure of a semiconductor superlattice. Springer Nature  Nature  vol. 317, (6036) 418-419. 10.1038/317418a0

Humphreys CJ (1985). Surface physics: Hopping atoms in crystal growth. Springer Nature  Nature  vol. 317, (6032) 16-16. 10.1038/317016a0

Timsit RS, Waddington WG, Humphreys CJ and Hutchison JL (1985). Structure of the Al/Al2O3 interface. Aip Publishing  Applied Physics Letters  vol. 46, (9) 830-832. 10.1063/1.95899

Timsit RS, Waddington WG, Humphreys CJ and Hutchison JL (1985). Examination of the Al/Al2O3 interface by high-resolution electron microscopy. Elsevier  Ultramicroscopy  vol. 18, (1-4) 387-394. 10.1016/0304-3991(85)90157-3

1984

Salisbury IG, Timsit RS, Berger SD and Humphreys CJ (1984). Nanometer scale electron beam lithography in inorganic materials. Aip Publishing  Applied Physics Letters  vol. 45, (12) 1289-1291. 10.1063/1.95115

Humphreys CJ (1984). MICRO-84: Electron microscopy 50 years on. Springer Nature  Nature  vol. 311, (5981) 12-12. 10.1038/311012a0

Cherns D, Hetherington CJD and Humphreys CJ (1984). The atomic structure of the NiSi2-(001)Si interface. Taylor & Francis  The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics  vol. 49, (1) 165-177. 10.1080/01418618408233436

Humphreys CJ (1984). Crytallography: Defects in reduced oxides. Springer Nature  Nature  vol. 309, (5966) 310-310. 10.1038/309310a0

Spence JCH and Humphreys CJ (1984). CHANNELLING RADIATION IN ELECTRON MICROSCOPY. Optik (Jena)  vol. 66, (3) 225-242.

Butler JH, Spence JCH, Reese G, Humphreys CJ and Doole RC (1984). The energy dependence of axial coherent bremsstrahlung at low accelerating voltages. Taylor & Francis  Radiation Effects and Defects in Solids  vol. 84, (3-4) 245-256. 10.1080/00337578508224061

1983

Hull R, Petford AK, Humphreys CJ and Smith DJ (1983). High resolution electron microscopy of silver β- and β″ -aluminas. Elsevier  Solid State Ionics  vol. 9, 181-186. 10.1016/0167-2738(83)90231-x

Humphreys CJ and Waddington WG (1983). Dating the Crucifixion. Springer Nature  Nature  vol. 306, (5945) 743-746. 10.1038/306743a0

Hull R, Smith DJ and Humphreys CJ (1983). A high‐resolution electron microscopic study of defects in sodium β′″‐alumina. Wiley  Journal of Microscopy  vol. 130, (2) 203-214. 10.1111/j.1365-2818.1983.tb04218.x

Mochel ME, Humphreys CJ, Eades JA, Mochel JM and Petford AM (1983). Electron beam writing on a 20-Å scale in metal β-aluminas. Aip Publishing  Applied Physics Letters  vol. 42, (4) 392-394. 10.1063/1.93918

1981

Humphreys CJ (1981). Fundamental concepts of stem imaging. Elsevier  Ultramicroscopy  vol. 7, (1) 7-12. 10.1016/0304-3991(81)90017-6

Humphreys CJ and Spence JCH (1981). RESOLUTION AND ILLUMINATION COHERENCE IN ELECTRON MICROSCOPY. Optik (Jena)  vol. 58, (2) 125-142.

1980

Spencer JP and Humphreys CJ (1980). A multiple scattering transport theory for electron. Taylor & Francis  The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics  vol. 42, (4) 433-451. 10.1080/01418618008239368

Sellar JR, Imeson D and Humphreys CJ (1980). The critical‐voltage effect in convergent‐beam high‐voltage electron diffraction. International Union of Crystallography (Iucr)  Acta Crystallographica Section a: Foundations and Advances  vol. 36, (4) 686-696. 10.1107/s0567739480001398

Sellar JR, Imeson D and Humphreys CJ (1980). The combined convergent beam/critical voltage technique in high voltage electron microscopy. Elsevier  Micron (1969)  vol. 11, (3-4) 241-242. 10.1016/0047-7206(80)90004-7

1979

Humphreys CJ (1979). The scattering of fast electrons by crystals. Iop Publishing  Reports On Progress in Physics  vol. 42, (11) 10.1088/0034-4885/42/11/002

Buckley-golder IM and Humphreys CJ (1979). A theoretical study of temperature distributions during Czochralski crystal growth. Taylor & Francis  The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics  vol. 39, (1) 41-57. 10.1080/01418617908239274

1977

Humphreys CJ, Drummond RA, Hart-davis A and Butler EP (1977). Additional image peaks in the high resolution imaging of dislocations. Taylor & Francis  The London Edinburgh and Dublin Philosophical Magazine and Journal of Science  vol. 35, (6) 1543-1555. 10.1080/14786437708232977

Rez P, Humphreys CJ and Whelan MJ (1977). The distribution of intensity in electron diffraction patterns due to phonon scattering. Taylor & Francis  The London Edinburgh and Dublin Philosophical Magazine and Journal of Science  vol. 35, (1) 81-96. 10.1080/14786437708235974

1974

Sandström R, Spencer JF and Humphreys CJ (1974). A theoretical model for the energy dependence of electron channelling patterns in scanning electron microscopy. Iop Publishing  Journal of Physics D  vol. 7, (7) 10.1088/0022-3727/7/7/310

Humphreys CJ (1974). Recent applications of high voltage electron microscopy in various branches of science. Microscope  vol. 22, (2) 129-140.

1973

Humphreys CJ, Spencer JP, Woolf RJ, Joy DC, Titchmarsh JM, Booker GR, Strojnik A, STickler R, Howell PGT, Boyde A, Brandis EK, Johari O and DeNee PB (1973). SCANNING ELECTRON MICROSCOPY/1972. PROC I: 5TH ANNUAL SCANNING ELECTRON MICROSCOPE SYMPOSIUM, APR 1972; II: WORKSHOP ON BIOLOGICAL SPECIMEN PREPARATION FOR SCANNING ELECTRON MICROSCOPY, APR 1972.

1972

Spencer JP, Humphreys CJ and Hirsch PB (1972). A dynamical theory for the contrast of perfect and imperfect crystals in the scanning electron microscope using backscattered electrons. Taylor & Francis  The London Edinburgh and Dublin Philosophical Magazine and Journal of Science  vol. 26, (1) 193-213. 10.1080/14786437208221029

Humphreys CJ (1972). The optimum voltage in very high voltage electron microscopy. Taylor & Francis  The London Edinburgh and Dublin Philosophical Magazine and Journal of Science  vol. 25, (6) 1459-1472. 10.1080/14786437208223865

Lally JS, Humphreys CJ, Metherell AJF and Fisher RM (1972). The critical voltage effect in high voltage electron microscopy. Taylor & Francis  The London Edinburgh and Dublin Philosophical Magazine and Journal of Science  vol. 25, (2) 321-343. 10.1080/14786437208226808

1971

Humphreys CJ, Thomas LE, Lally JS and Fisher RM (1971). Maximizing the penetration in high voltage electron microscopy. Taylor & Francis  The London Edinburgh and Dublin Philosophical Magazine and Journal of Science  vol. 23, (181) 87-114. 10.1080/14786437108216366

Humphreys CJ and Fisher RM (1971). Bloch wave notation in many‐beam electron diffraction theory. International Union of Crystallography (Iucr)  Acta Crystallographica Section a: Foundations and Advances  vol. 27, (1) 42-45. 10.1107/s0567739471000081

1970

Thomas LE and Humphreys CJ (1970). Kikuchi patterns in a high voltage electron microscope. Wiley  Physica Status Solidi (a) – Applications and Materials Science  vol. 3, (3) 599-615. 10.1002/pssa.19700030306

Tanner BK and Humphreys CJ (1970). High resolution divergent-beam X-ray topography. Iop Publishing  Journal of Physics D  vol. 3, (7) 10.1088/0022-3727/3/7/421

Humphreys CJ and Lally JS (1970). Aspects of Bloch-Wave Channeling in High-Voltage Electron Microscopy. Aip Publishing  Journal of Applied Physics  vol. 41, (1) 232-235. 10.1063/1.1658326

Thomas LE, Humphreys CJ, Duff WR and Grubb DT (1970). Radiation damage of polymers in the million volt electron microscope. Taylor & Francis  Radiation Effects and Defects in Solids  vol. 3, (1) 89-91. 10.1080/00337577008235620

1969

Humphreys CJ and Whelan MJ (1969). Inelastic scattering of fast electrons by crystals. Taylor & Francis  The London Edinburgh and Dublin Philosophical Magazine and Journal of Science  vol. 20, (163) 165-172. 10.1080/14786436908228543

1968

Humphreys CJ and Hirsch PB (1968). Absorption parameters in electron diffraction theory. Taylor & Francis  The London Edinburgh and Dublin Philosophical Magazine and Journal of Science  vol. 18, (151) 115-122. 10.1080/14786436808227313

1967

Humphreys CJ, Howie A and Booker GR (1967). Some electron diffraction contrast effects at planar defects in crystals. Taylor & Francis  The London Edinburgh and Dublin Philosophical Magazine and Journal of Science  vol. 15, (135) 507-522. 10.1080/14786436708220898

Grants

Grants of specific relevance to

Integrated GaN-Diamond Microwave Electronics: From Materials, Transistors to MMICs
Kuball M, Humphreys CJ, Thayne IG, Williams OA, Tasker PJ, Oliver RA, Wallis DJ, Ding YL, Elgaid K and May PW
£4,325,358 Engineering and Physical Sciences Research Council (01-01-2017 - 31-12-2021)

Summary

Beyond Blue: New Horizons in Nitrides (Platform Grant Renewal)
Oliver RA and Humphreys CJ
£979,287 Engineering and Physical Sciences Research Council (29-01-2015 - 28-12-2020)

Summary

Replacing Indium Tin Oxide (ITO) with next-generation graphene in electronic devices (GRAPHIC)
Humphreys CJ
£149,841 Technology Strategy Board (01-01-2019 - 30-06-2020)

Summary

Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates
Humphreys CJ and Oliver RA
£434,930 Engineering and Physical Sciences Research Council (30-04-2016 - 29-04-2020)

Summary

Silicon Compatible GaN Power Electronics
Thayne I, Chalker P, Forsyth A, Foxon C, Houston PA, Humphreys C, Johnson C, Kuball M, Moran D, Novikov S, Paul D and Wasige E
£6,196,717 Engineering and Physical Sciences Research Council (01-03-2013 - 30-08-2018)

Summary

Free-standing wurtzite AlGaN substrates for deep ultraviolet (DUV) devices.
Novikov S, Allsopp D, Campion R, Foxon C, Humphreys C, Kent A, Oliver R and Shields P
£688,437 Engineering and Physical Sciences Research Council (31-07-2013 - 31-01-2017)

Summary

Lighting the Future
Humphreys C, Allsopp D, Cheetham A, Dawson P, Martin R, Oliver R and Skabara P
£6,361,650 Engineering and Physical Sciences Research Council (01-12-2010 - 30-11-2015)

Summary

Study of semi-polar and non-polar nitride based structures for opto-electronic device applications
Oliver R, Humphreys C and Moram M
£560,765 Engineering and Physical Sciences Research Council (01-01-2012 - 29-06-2015)

Summary

Nitrides for the 21st century
Humphreys C and Oliver R
£826,500 Engineering and Physical Sciences Research Council (01-11-2009 - 31-10-2014)

Summary

Science Bridge Award USA: Harnessing Materials for Energy
Humphreys C, Cheetham A, Deshpande V, Friend R and White IH
£1,447,635 Engineering and Physical Sciences Research Council (12-04-2009 - 11-10-2012)

Summary

LED Lighting for the 21st Century
Humphreys C
£219,473 Engineering and Physical Sciences Research Council (30-09-2008 - 28-02-2011)

Summary

An Advanced SEM-FIB Dual Beam Microscope for Three-Dimensional Mesoscale Fabrication, Imaging and Analysis
Midgley P, Best S, Blamire M, Greer A and Humphreys C
£1,223,819 Engineering and Physical Sciences Research Council (31-08-2007 - 28-02-2011)

Summary

Materials Challenges in GaN-based Light Emitting Structures
Humphreys C and Oliver R
£1,362,142 Engineering and Physical Sciences Research Council (01-11-2006 - 29-09-2010)

Summary

Quantitative, high resolution two-and-three dimensional dopant mapping in the Scanning Electron Microscope by Secondary Electron Spectro-Micro
Humphreys C
£45,701 Engineering and Physical Sciences Research Council (31-08-2007 - 30-08-2010)

Summary

Defect reduction in GaN using the in-situ growth of transition metal nitride layers
Humphreys C, Barber Z and Moram M
£39,669 Engineering and Physical Sciences Research Council (01-01-2008 - 29-06-2008)

Summary

A Direct Approach to Crystal Structure Determination - a solution to the phase problem
Etheridge J, Moodie A and Humphreys C
AUD281,867 Australian Research Council (01-01-2003 - 01-04-2007)

Summary

Optimising GaN light emitting structures on free-standing GaN substrates
Humphreys C
£68,881 Engineering and Physical Sciences Research Council (30-06-2006 - 31-10-2006)

Summary